Details
| Original language | English |
|---|---|
| Article number | 2000435 |
| Journal | Solar RRL |
| Volume | 4 |
| Issue number | 12 |
| Early online date | 19 Sept 2020 |
| Publication status | Published - 10 Dec 2020 |
Abstract
The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.
Keywords
- back junction, p-type wafers, polycrystalline passivating contacts
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Energy(all)
- Energy Engineering and Power Technology
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: Solar RRL, Vol. 4, No. 12, 2000435, 10.12.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A 22.3% Efficient p-Type Back Junction Solar Cell with an Al-Printed Front-Side Grid and a Passivating n+-Type Polysilicon on Oxide Contact at the Rear Side
AU - Min, Byungsul
AU - Wehmeier, Nadine
AU - Brendemuehl, Till
AU - Merkle, Agnes
AU - Haase, Felix
AU - Larionova, Yevgeniya
AU - David, Lasse
AU - Schulte-Huxel, Henning
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Funding Information: The authors thank M. Pollmann, B. Gehring, R. Winter, S. Spaetlich, T. Neubert, and D. Sylla for processing solar cells; A. Raugewitz for SEM measurements; and K. Bothe, D. Hinken, T. Dullweber, V. Mertens, S. Schaefer, S. Bordihn, and J. Aprojanz (all ISFH) for fruitful discussions. The authors also thank M. Dhamrin and K. Tsuji from Toyo Aluminum for helpful advices and for providing the aluminum pastes and S. Huebner, T. Dippell, B. Wattenberg, and P. Wohlfart from Singulus Technologies AG for constructive discussions. This work was financially supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contact number 03EE1012A (NanoPERC) and a part of this work was supported under contact number 0324171C (Nextstep).
PY - 2020/12/10
Y1 - 2020/12/10
N2 - The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.
AB - The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n+-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.
KW - back junction
KW - p-type wafers
KW - polycrystalline passivating contacts
UR - http://www.scopus.com/inward/record.url?scp=85091726665&partnerID=8YFLogxK
U2 - 10.1002/solr.202000435
DO - 10.1002/solr.202000435
M3 - Article
AN - SCOPUS:85091726665
VL - 4
JO - Solar RRL
JF - Solar RRL
IS - 12
M1 - 2000435
ER -