A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier

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External Research Organisations

  • Technical University of Munich (TUM)
  • Infineon Technologies AG
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Details

Original languageEnglish
Pages (from-to)457+462-463+508
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2003
Externally publishedYes
Event2003 Digest of Technical Papers - , United States
Duration: 9 Feb 200313 Feb 2003

Abstract

A fully-differential current sense amplifier operates as low as 0.7V, automatically turns off after reading and features fast precharge. An implementation of a 1.5V 4k × 32 dual-port SRAM macro in a 130nm CMOS process achieves an access time of 1.7ns.

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Cite this

A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier. / Wicht, Bernhard; Larguier, Jean Yves; Schmitt-Landsiedel, Doris.
In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2003, p. 457+462-463+508.

Research output: Contribution to journalConference articleResearchpeer review

Wicht, B, Larguier, JY & Schmitt-Landsiedel, D 2003, 'A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier', Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 457+462-463+508.
Wicht, B., Larguier, J. Y., & Schmitt-Landsiedel, D. (2003). A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 457+462-463+508.
Wicht B, Larguier JY, Schmitt-Landsiedel D. A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2003;457+462-463+508.
Wicht, Bernhard ; Larguier, Jean Yves ; Schmitt-Landsiedel, Doris. / A 1.5V 1.7ns 4k × 32 SRAM with a fully-differential auto-power-down current sense amplifier. In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2003 ; pp. 457+462-463+508.
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