Details
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE International Solid-State Circuits Conference (ISSCC) |
| Editors | Laura C. Fujino |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 432-433 |
| Number of pages | 2 |
| ISBN (electronic) | 9781509037582 |
| ISBN (print) | 9781509037599 |
| Publication status | Published - 2017 |
| Externally published | Yes |
| Event | 64th IEEE International Solid-State Circuits Conference, ISSCC 2017 - San Francisco, United States Duration: 5 Feb 2017 → 9 Feb 2017 |
Publication series
| Name | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
|---|---|
| Volume | 60 |
| ISSN (Print) | 0193-6530 |
| ISSN (electronic) | 2376-8606 |
Abstract
More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
2017 IEEE International Solid-State Circuits Conference (ISSCC). ed. / Laura C. Fujino. Institute of Electrical and Electronics Engineers Inc., 2017. p. 432-433 7870446 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 60).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing
AU - Seidel, Achim
AU - Wicht, Bernhard
N1 - Publisher Copyright: © 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017
Y1 - 2017
N2 - More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.
AB - More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.
UR - http://www.scopus.com/inward/record.url?scp=85016267677&partnerID=8YFLogxK
U2 - 10.1109/ISSCC.2017.7870446
DO - 10.1109/ISSCC.2017.7870446
M3 - Conference contribution
AN - SCOPUS:85016267677
SN - 9781509037599
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 432
EP - 433
BT - 2017 IEEE International Solid-State Circuits Conference (ISSCC)
A2 - Fujino, Laura C.
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th IEEE International Solid-State Circuits Conference, ISSCC 2017
Y2 - 5 February 2017 through 9 February 2017
ER -