Details
| Original language | English |
|---|---|
| Title of host publication | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
| Publication status | Published - 10 Aug 2018 |
| Event | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1999 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
The bulk lifetime of epitaxially grown silicon wafers increases significantly after phosphorous diffusion gettering. A strong diffusion is advantageous for gettering but is not ideal for highest solar cell efficiencies. We find that gettering with an n-type polycrystalline silicon on oxide (POLO) junction increases the bulk lifetime of epitaxial wafers from originally 2.3 to 4.3 ms to finally up to 8 ms at an injection level Δp = 1015 cm-3. This lifetime increase as large as for phosphorous-diffusion gettering. However, POLO junctions have a superior surface passivation when compared to diffused junctions. This offers a novel gettering process that not only increase the charge carrier lifetime of epitaxial wafers but can also be effectively integrated into a solar cell processes employing POLO junctions.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. 2018. 130005 (AIP Conference Proceedings; Vol. 1999).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - 9 ms carrier lifetime in kerfless epitaxial wafers by n-type POLO gettering
AU - Gemmel, Catherin
AU - Hensen, Jan
AU - Folchert, Nils
AU - Haase, Felix
AU - Peibst, Robby
AU - Kajari-Schröder, Sarah
AU - Brendel, Rolf
N1 - Funding Information: The authors would like to thank Jessica Strey for wafer processing. This work was funded by the German Federal Ministry for Economic Affairs and Energy under Grant 0324107 (NEPSIC) and the state of Lower Saxony. Publisher Copyright: © 2018 Author(s). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/8/10
Y1 - 2018/8/10
N2 - The bulk lifetime of epitaxially grown silicon wafers increases significantly after phosphorous diffusion gettering. A strong diffusion is advantageous for gettering but is not ideal for highest solar cell efficiencies. We find that gettering with an n-type polycrystalline silicon on oxide (POLO) junction increases the bulk lifetime of epitaxial wafers from originally 2.3 to 4.3 ms to finally up to 8 ms at an injection level Δp = 1015 cm-3. This lifetime increase as large as for phosphorous-diffusion gettering. However, POLO junctions have a superior surface passivation when compared to diffused junctions. This offers a novel gettering process that not only increase the charge carrier lifetime of epitaxial wafers but can also be effectively integrated into a solar cell processes employing POLO junctions.
AB - The bulk lifetime of epitaxially grown silicon wafers increases significantly after phosphorous diffusion gettering. A strong diffusion is advantageous for gettering but is not ideal for highest solar cell efficiencies. We find that gettering with an n-type polycrystalline silicon on oxide (POLO) junction increases the bulk lifetime of epitaxial wafers from originally 2.3 to 4.3 ms to finally up to 8 ms at an injection level Δp = 1015 cm-3. This lifetime increase as large as for phosphorous-diffusion gettering. However, POLO junctions have a superior surface passivation when compared to diffused junctions. This offers a novel gettering process that not only increase the charge carrier lifetime of epitaxial wafers but can also be effectively integrated into a solar cell processes employing POLO junctions.
UR - http://www.scopus.com/inward/record.url?scp=85051926472&partnerID=8YFLogxK
U2 - 10.1063/1.5049324
DO - 10.1063/1.5049324
M3 - Conference contribution
AN - SCOPUS:85051926472
SN - 9780735417151
T3 - AIP Conference Proceedings
BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
Y2 - 19 March 2018 through 21 March 2018
ER -