Details
| Original language | English |
|---|---|
| Pages (from-to) | 377-386 |
| Number of pages | 10 |
| Journal | Magnetohydrodynamics |
| Volume | 43 |
| Issue number | 3 |
| Publication status | Published - 2007 |
Abstract
A previously developed system of 3D numerical models made for modelling steady-state melt hydrodynamics and dopant concentration fields in the floating zone silicon single crystal growth process has been modified in order to solve unsteady problems. The asymmetric form of one turn of a high frequency inductor coil, the shift of a polycrystalline feed rod and a single crystal axis are taken into account at calculating the 3D HF electromagnetic field. During transient 3D hydrodynamic calculations, the EM forces, Marangoni and buoyancy forces are considered. The paper presents a 3D unsteady calculation example of a realistic FZ silicon single crystal growth system showing the influence of the crystal rotation rate change on the melt motion and dopant concentration field, which is used to derive variations of normalized resistivity profiles in the grown crystal.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
- Engineering(all)
- Electrical and Electronic Engineering
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In: Magnetohydrodynamics, Vol. 43, No. 3, 2007, p. 377-386.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - 3D unsteady modelling of the melt flow in the FZ silicon crystal growth process
AU - Muižnieks, A.
AU - Lacis, K.
AU - Nacke, B.
PY - 2007
Y1 - 2007
N2 - A previously developed system of 3D numerical models made for modelling steady-state melt hydrodynamics and dopant concentration fields in the floating zone silicon single crystal growth process has been modified in order to solve unsteady problems. The asymmetric form of one turn of a high frequency inductor coil, the shift of a polycrystalline feed rod and a single crystal axis are taken into account at calculating the 3D HF electromagnetic field. During transient 3D hydrodynamic calculations, the EM forces, Marangoni and buoyancy forces are considered. The paper presents a 3D unsteady calculation example of a realistic FZ silicon single crystal growth system showing the influence of the crystal rotation rate change on the melt motion and dopant concentration field, which is used to derive variations of normalized resistivity profiles in the grown crystal.
AB - A previously developed system of 3D numerical models made for modelling steady-state melt hydrodynamics and dopant concentration fields in the floating zone silicon single crystal growth process has been modified in order to solve unsteady problems. The asymmetric form of one turn of a high frequency inductor coil, the shift of a polycrystalline feed rod and a single crystal axis are taken into account at calculating the 3D HF electromagnetic field. During transient 3D hydrodynamic calculations, the EM forces, Marangoni and buoyancy forces are considered. The paper presents a 3D unsteady calculation example of a realistic FZ silicon single crystal growth system showing the influence of the crystal rotation rate change on the melt motion and dopant concentration field, which is used to derive variations of normalized resistivity profiles in the grown crystal.
UR - http://www.scopus.com/inward/record.url?scp=84871014413&partnerID=8YFLogxK
U2 - 10.22364/mhd.43.3.9
DO - 10.22364/mhd.43.3.9
M3 - Article
AN - SCOPUS:84871014413
VL - 43
SP - 377
EP - 386
JO - Magnetohydrodynamics
JF - Magnetohydrodynamics
SN - 0024-998X
IS - 3
ER -