Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the International Colloquium Modelling of Material Processing |
| Subtitle of host publication | Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover |
| Place of Publication | Riga |
| Pages | 30-35 |
| Publication status | Published - 1999 |
| Event | International Scientific Colloquium Modelling of Material Processing - Riga Duration: 28 May 1999 → 29 May 1999 |
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3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. / Ratnieks, Gundars; Muiznieks, Andris; Raming, Georg et al.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. p. 30-35.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. p. 30-35.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research
Ratnieks, G, Muiznieks, A, Raming, G, Mühlbauer, A & Buligins, L 1999, 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, pp. 30-35, International Scientific Colloquium Modelling of Material Processing, Riga, 28 May 1999.
Ratnieks, G., Muiznieks, A., Raming, G., Mühlbauer, A., & Buligins, L. (1999). 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover (pp. 30-35).
Ratnieks G, Muiznieks A, Raming G, Mühlbauer A, Buligins L. 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga. 1999. p. 30-35
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@inproceedings{4b86b940caa74ff59f3fa3e87476f7b3,
title = "3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth",
author = "Gundars Ratnieks and Andris Muiznieks and Georg Raming and Alfred M{\"u}hlbauer and L. Buligins",
year = "1999",
language = "English",
isbn = "9984-572-38-2",
pages = "30--35",
booktitle = "Proceedings of the International Colloquium Modelling of Material Processing",
note = "International Scientific Colloquium Modelling of Material Processing ; Conference date: 28-05-1999 Through 29-05-1999",
}
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TY - GEN
T1 - 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth
AU - Ratnieks, Gundars
AU - Muiznieks, Andris
AU - Raming, Georg
AU - Mühlbauer, Alfred
AU - Buligins, L.
PY - 1999
Y1 - 1999
M3 - Conference contribution
SN - 9984-572-38-2
SP - 30
EP - 35
BT - Proceedings of the International Colloquium Modelling of Material Processing
CY - Riga
T2 - International Scientific Colloquium Modelling of Material Processing
Y2 - 28 May 1999 through 29 May 1999
ER -