Details
| Original language | English |
|---|---|
| Title of host publication | 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1344-1345 |
| Number of pages | 2 |
| ISBN (electronic) | 9781728161150 |
| ISBN (print) | 978-1-7281-6116-7 |
| Publication status | Published - 2020 |
| Event | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| Volume | 2020-June |
| ISSN (Print) | 0160-8371 |
Abstract
Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.
Keywords
- 2D/3D heterostructure, passivation layer, perovskite, poly-Si, silicon, tandem solar cells, wide-bandgap
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 1344-1345 9300952 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2020-June).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - 2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics
AU - Gharibzadeh, Saba
AU - Hossain, Ihteaz M.
AU - Fassl, Paul
AU - Mertens, Adrian
AU - Schafer, Soren
AU - Rienacker, Michael
AU - Wietler, Tobias
AU - Peibst, Robby
AU - Richards, Bryce S.
AU - Paetzold, Ulrich W.
PY - 2020
Y1 - 2020
N2 - Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.
AB - Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.
KW - 2D/3D heterostructure
KW - passivation layer
KW - perovskite
KW - poly-Si
KW - silicon
KW - tandem solar cells
KW - wide-bandgap
UR - http://www.scopus.com/inward/record.url?scp=85099548131&partnerID=8YFLogxK
U2 - 10.1109/PVSC45281.2020.9300952
DO - 10.1109/PVSC45281.2020.9300952
M3 - Conference contribution
AN - SCOPUS:85099548131
SN - 978-1-7281-6116-7
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1344
EP - 1345
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -