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2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality

Research output: Chapter in book/report/conference proceedingConference contributionResearch

Authors

  • Alfred Mühlbauer
  • Andris Muiznieks
  • Georg Raming
  • Gundars Ratnieks

Details

Original languageGerman
Title of host publicationProceedings of the International Colloquium Modelling for Saving Resources
Subtitle of host publicationRiga, May 17 - 18, 2001
Place of PublicationRiga
Number of pages6
Publication statusPublished - 2001
EventInternational Colloquium Modelling for Saving Resources - Riga
Duration: 17 May 200118 May 2001

Cite this

2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality. / Mühlbauer, Alfred; Muiznieks, Andris; Raming, Georg et al.
Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga, 2001.

Research output: Chapter in book/report/conference proceedingConference contributionResearch

Mühlbauer, A, Muiznieks, A, Raming, G & Ratnieks, G 2001, 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality. in Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga, International Colloquium Modelling for Saving Resources, Riga, 17 May 2001.
Mühlbauer, A., Muiznieks, A., Raming, G., & Ratnieks, G. (2001). 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001
Mühlbauer A, Muiznieks A, Raming G, Ratnieks G. 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality. In Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga. 2001
Mühlbauer, Alfred ; Muiznieks, Andris ; Raming, Georg et al. / 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth : Relation between Growth Process and Crystal Quality. Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga, 2001.
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@inproceedings{a84495bd8959499ba2fff662fda4494d,
title = "2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality",
author = "Alfred M{\"u}hlbauer and Andris Muiznieks and Georg Raming and Gundars Ratnieks",
year = "2001",
language = "Deutsch",
isbn = "9984-661-89-X",
booktitle = "Proceedings of the International Colloquium Modelling for Saving Resources",
note = "International Colloquium Modelling for Saving Resources ; Conference date: 17-05-2001 Through 18-05-2001",

}

Download

TY - GEN

T1 - 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth

T2 - International Colloquium Modelling for Saving Resources

AU - Mühlbauer, Alfred

AU - Muiznieks, Andris

AU - Raming, Georg

AU - Ratnieks, Gundars

PY - 2001

Y1 - 2001

M3 - Aufsatz in Konferenzband

SN - 9984-661-89-X

BT - Proceedings of the International Colloquium Modelling for Saving Resources

CY - Riga

Y2 - 17 May 2001 through 18 May 2001

ER -