Details
| Original language | English |
|---|---|
| Article number | 110021 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 200 |
| Early online date | 1 Jul 2019 |
| Publication status | Published - 15 Sept 2019 |
Abstract
Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.
Keywords
- Back-contact solar cell, Edge loss, Passivating contacts, Perimeter recombination
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 200, 110021, 15.09.2019.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - 26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges
AU - Schäfer, S.
AU - Haase, Felix
AU - Hollemann, Christina
AU - Hensen, J.
AU - Krügener, Jan
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) (grant number 0325827A , project 26+) and the State of Lower Saxony for funding this work, Hilke Fischer, Annika Raugewitz, Sabine Schmidt (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing and Tobias Neubert and David Sylla (both ISFH) for fruitful discussions about the laser process.
PY - 2019/9/15
Y1 - 2019/9/15
N2 - Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.
AB - Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.
KW - Back-contact solar cell
KW - Edge loss
KW - Passivating contacts
KW - Perimeter recombination
UR - http://www.scopus.com/inward/record.url?scp=85068079099&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2019.110021
DO - 10.1016/j.solmat.2019.110021
M3 - Article
AN - SCOPUS:85068079099
VL - 200
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
M1 - 110021
ER -