Details
| Original language | English |
|---|---|
| Number of pages | 9 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Early online date | 6 Jun 2024 |
| Publication status | E-pub ahead of print - 6 Jun 2024 |
Abstract
An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.
Keywords
- aluminum oxide/silicon nitride stacks, p-type wafers, plasma-enhanced chemical vapor deposition, surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, 06.06.2024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - 24.2% efficient POLO back junction solar cell with an AlOx/SiNy dielectric stack from an industrial-scale direct plasma-enhanced chemical vapor deposition system
AU - Min, Byungsul
AU - Mertens, Verena
AU - Larionova, Yevgeniya
AU - Pernau, Thomas
AU - Haverkamp, Helge
AU - Dullweber, Thorsten
AU - Peibst, Robby
AU - Brendel, Rolf
N1 - Publisher Copyright: © 2024 John Wiley & Sons Ltd.
PY - 2024/6/6
Y1 - 2024/6/6
N2 - An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.
AB - An aluminum oxide (AlOx)/silicon nitride (SiNy) dielectric stack was developed using an industrial plasma-enhanced chemical vapor deposition (PECVD) system with low-frequency (LF) plasma source for the surface passivation of undiffused textured p-type crystalline silicon. The median recombination current density is 4.3 fA cm−2 as determined from photoconductance decay lifetime measurements and numerical device modeling. To the best of our knowledge, this is the first time to present a high-quality LF-PECVD AlOx/SiNy passivation stack on undiffused textured p-type crystalline silicon wafers, which are cleaned with industrial processes using HF, HCl, and O3. The simulation agrees well with the measured effective carrier lifetime if the velocity parameters of 5.6 cm s−1 for holes and 803 cm s−1 for electrons are applied with a fixed negative charge density of −3 × 1012 cm−2. The process integration of developed AlOx/SiNy dielectric stack is successfully demonstrated by fabricating p-type back junction solar cells featuring a poly-Si-based passivating contact at the cell rear side. As the best cell efficiency, we achieve 24.2% with an open-circuit voltage of 725 mV on a M2-sized Ga-doped p-type Czochralski-grown Si wafer as independently confirmed by ISFH CalTeC.
KW - aluminum oxide/silicon nitride stacks
KW - p-type wafers
KW - plasma-enhanced chemical vapor deposition
KW - surface passivation
UR - http://www.scopus.com/inward/record.url?scp=85195446302&partnerID=8YFLogxK
U2 - 10.1002/pip.3828
DO - 10.1002/pip.3828
M3 - Article
AN - SCOPUS:85195446302
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
ER -