Details
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 20 |
| Issue number | 1 |
| Publication status | Published - 29 Dec 2011 |
Abstract
We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm 2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8 mA cm -2, an open-circuit voltage of 650 mV, and a fill factor of 77.6%.
Keywords
- crystalline Si, free standing, kerf-free, layer transfer, porous silicon, thin film
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 20, No. 1, 29.12.2011, p. 1-5.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - 19%-efficient and 43 μm-thick crystalline Si solar cell from layer transfer using porous silicon
AU - Petermann, Jan Hendrik
AU - Zielke, Dimitri
AU - Schmidt, Jan
AU - Haase, Felix
AU - Rojas, Enrique Garralaga
AU - Brendel, Rolf
PY - 2011/12/29
Y1 - 2011/12/29
N2 - We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm 2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8 mA cm -2, an open-circuit voltage of 650 mV, and a fill factor of 77.6%.
AB - We present a both-sides-contacted thin-film crystalline silicon (c-Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm 2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short-circuit current density of 37.8 mA cm -2, an open-circuit voltage of 650 mV, and a fill factor of 77.6%.
KW - crystalline Si
KW - free standing
KW - kerf-free
KW - layer transfer
KW - porous silicon
KW - thin film
UR - http://www.scopus.com/inward/record.url?scp=84855323159&partnerID=8YFLogxK
U2 - 10.1002/pip.1129
DO - 10.1002/pip.1129
M3 - Article
AN - SCOPUS:84855323159
VL - 20
SP - 1
EP - 5
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 1
ER -