Details
| Original language | English |
|---|---|
| Pages (from-to) | 147-149 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 5 |
| Issue number | 4 |
| Early online date | 1 Mar 2011 |
| Publication status | Published - 12 Apr 2011 |
Abstract
We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm2 p-type 2-3 Ω cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of Srear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved Jsc of up to 38.9 mA/cm2 and Voc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (
Keywords
- Photovoltaics, Silicon, Solar cells, Surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica Status Solidi - Rapid Research Letters, Vol. 5, No. 4, 12.04.2011, p. 147-149.
Research output: Contribution to journal › Letter › Research › peer review
}
TY - JOUR
T1 - 19.4%-efficient large-area fully screen-printed silicon solar cells
AU - Gatz, Sebastian
AU - Hannebauer, Helge
AU - Hesse, Rene
AU - Werner, Florian
AU - Schmidt, Arne
AU - Dullweber, Thorsten
AU - Schmidt, Jan
AU - Bothe, Karsten
AU - Brendel, Rolf
PY - 2011/4/12
Y1 - 2011/4/12
N2 - We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm2 p-type 2-3 Ω cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of Srear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved Jsc of up to 38.9 mA/cm2 and Voc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (
AB - We demonstrate industrially feasible large-area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm2 p-type 2-3 Ω cm boron-doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen-printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic-layer-deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of Srear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved Jsc of up to 38.9 mA/cm2 and Voc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full-area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen-printed solar cells. (
KW - Photovoltaics
KW - Silicon
KW - Solar cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=79954483661&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105045
DO - 10.1002/pssr.201105045
M3 - Letter
AN - SCOPUS:79954483661
VL - 5
SP - 147
EP - 149
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 4
ER -