Details
Original language | English |
---|---|
Pages (from-to) | 533-539 |
Number of pages | 7 |
Journal | Progress in Photovoltaics: Research and Applications |
Volume | 14 |
Issue number | 6 |
Publication status | Published - Sept 2006 |
Externally published | Yes |
Abstract
High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
Keywords
- Aluminium-alloyed emitter, Czochralski silicon solar cells, n-type solar cells, Rear junction, Screen-printed aluminium emitter, Solar cell efficiencies
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 14, No. 6, 09.2006, p. 533-539.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - 19% efficient n-type czochralski silicon solar cells with screen-printed aluminium-alloyed rear emitter
AU - Schmiga, Christian
AU - Schmidt, Jan
AU - Nagel, Henning
PY - 2006/9
Y1 - 2006/9
N2 - High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
AB - High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
KW - Aluminium-alloyed emitter
KW - Czochralski silicon solar cells
KW - n-type solar cells
KW - Rear junction
KW - Screen-printed aluminium emitter
KW - Solar cell efficiencies
UR - http://www.scopus.com/inward/record.url?scp=33748556502&partnerID=8YFLogxK
U2 - 10.1002/pip.725
DO - 10.1002/pip.725
M3 - Article
AN - SCOPUS:33748556502
VL - 14
SP - 533
EP - 539
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 6
ER -