19% efficient n-type czochralski silicon solar cells with screen-printed aluminium-alloyed rear emitter

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External Research Organisations

  • Institute for Solar Energy Research (ISFH)
  • Schott AG
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Details

Original languageEnglish
Pages (from-to)533-539
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Volume14
Issue number6
Publication statusPublished - Sept 2006
Externally publishedYes

Abstract

High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.

Keywords

    Aluminium-alloyed emitter, Czochralski silicon solar cells, n-type solar cells, Rear junction, Screen-printed aluminium emitter, Solar cell efficiencies

ASJC Scopus subject areas

Sustainable Development Goals

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19% efficient n-type czochralski silicon solar cells with screen-printed aluminium-alloyed rear emitter. / Schmiga, Christian; Schmidt, Jan; Nagel, Henning.
In: Progress in Photovoltaics: Research and Applications, Vol. 14, No. 6, 09.2006, p. 533-539.

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AU - Nagel, Henning

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