Details
| Original language | English |
|---|---|
| Pages (from-to) | 33-38 |
| Number of pages | 6 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 11 |
| Issue number | 1 |
| Early online date | 16 Dec 2002 |
| Publication status | E-pub ahead of print - 16 Dec 2002 |
| Externally published | Yes |
Abstract
Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31-33 mA/cm2 because the three {110}-oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. In this work, we have optimised a novel chemical texturing step for tri-Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor-contacted phosphorus.diffused n+p junction silicon solar cells with a silicon.dioxide-passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6% has been achieved. This excellent efficiency is mainly due to an increased short-circuit current density of 37mA/m2 obtained by substantially reduced reflection and enhanced light trapping.
Keywords
- Acid texturing, Grain boundaries, Light trapping, Reflection, Silicon solar cells, Solar cell efficiencies, Tricrystalline silicon, Uniform surface texture
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: Progress in Photovoltaics: Research and Applications, Vol. 11, No. 1, 16.12.2002, p. 33-38.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - 17.6% Efficient tricrystalline silicon solar cells with spatially uniform texture
AU - Schmiga, Christian
AU - Schmidt, Jan
AU - Metz, Axel
AU - Endrös, Arthur
AU - Hezel, Rudolf
PY - 2002/12/16
Y1 - 2002/12/16
N2 - Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31-33 mA/cm2 because the three {110}-oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. In this work, we have optimised a novel chemical texturing step for tri-Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor-contacted phosphorus.diffused n+p junction silicon solar cells with a silicon.dioxide-passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6% has been achieved. This excellent efficiency is mainly due to an increased short-circuit current density of 37mA/m2 obtained by substantially reduced reflection and enhanced light trapping.
AB - Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31-33 mA/cm2 because the three {110}-oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. In this work, we have optimised a novel chemical texturing step for tri-Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor-contacted phosphorus.diffused n+p junction silicon solar cells with a silicon.dioxide-passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6% has been achieved. This excellent efficiency is mainly due to an increased short-circuit current density of 37mA/m2 obtained by substantially reduced reflection and enhanced light trapping.
KW - Acid texturing
KW - Grain boundaries
KW - Light trapping
KW - Reflection
KW - Silicon solar cells
KW - Solar cell efficiencies
KW - Tricrystalline silicon
KW - Uniform surface texture
UR - http://www.scopus.com/inward/record.url?scp=0037238045&partnerID=8YFLogxK
U2 - 10.1002/pip.479
DO - 10.1002/pip.479
M3 - Article
AN - SCOPUS:0037238045
VL - 11
SP - 33
EP - 38
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 1
ER -