0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes 

Research output: Contribution to journal › Article › Research › peer review

Authors

  • H. D.B. Gottlob
  • T. Echtermeyer
  • M. Schmidt
  • T. Mollenhauer
  • J. K. Efavi
  • T. Wahlbrink
  • M. C. Lemme
  • M. Czernohorsky
  • E. Bugiel
  • A. Fissel
  • H. J. Osten
  • H. Kurz

Research Organisations

External Research Organisations

  • AMO GmbH
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Details

Original languageEnglish
Pages (from-to)814-816
Number of pages3
JournalIEEE electron device letters
Volume27
Issue number10
Publication statusPublished - 25 Sept 2006

Abstract

In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

Keywords

    Epitaxial dielectric, Fully silicided (FUSI), GdO, High-k, Metal gate, NiSi, Rare earth oxide

ASJC Scopus subject areas

Cite this

0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . / Gottlob, H. D.B.; Echtermeyer, T.; Schmidt, M. et al.
In: IEEE electron device letters, Vol. 27, No. 10, 25.09.2006, p. 814-816.

Research output: Contribution to journal › Article › Research › peer review

Gottlob, HDB, Echtermeyer, T, Schmidt, M, Mollenhauer, T, Efavi, JK, Wahlbrink, T, Lemme, MC, Czernohorsky, M, Bugiel, E, Fissel, A, Osten, HJ & Kurz, H 2006, '0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes ', IEEE electron device letters, vol. 27, no. 10, pp. 814-816. https://doi.org/10.1109/LED.2006.882581
Gottlob, H. D. B., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H. J., & Kurz, H. (2006). 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . IEEE electron device letters, 27(10), 814-816. https://doi.org/10.1109/LED.2006.882581
Gottlob HDB, Echtermeyer T, Schmidt M, Mollenhauer T, Efavi JK, Wahlbrink T et al. 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . IEEE electron device letters. 2006 Sept 25;27(10):814-816. doi: 10.1109/LED.2006.882581
Gottlob, H. D.B. ; Echtermeyer, T. ; Schmidt, M. et al. / 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . In: IEEE electron device letters. 2006 ; Vol. 27, No. 10. pp. 814-816.
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@article{4816b2c9b80d448a80db73fe7294d9ae,
title = "0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes ",
abstract = "In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.",
keywords = "Epitaxial dielectric, Fully silicided (FUSI), GdO, High-k, Metal gate, NiSi, Rare earth oxide",
author = "Gottlob, {H. D.B.} and T. Echtermeyer and M. Schmidt and T. Mollenhauer and Efavi, {J. K.} and T. Wahlbrink and Lemme, {M. C.} and M. Czernohorsky and E. Bugiel and A. Fissel and Osten, {H. J.} and H. Kurz",
note = "Funding Information: Manuscript received May 22, 2006; revised July 20, 2006. This work was supported by the German Federal Ministry of Education and Research (BMBF) under Contract 01M3142 (“KrisMOS”), AMD Saxony LLC and Company KG, Infineon Technologies AG, and Freescale Halbleiter Deutschland GmbH and Qimonda AG. The review of this letter was arranged by Editor B. Yu.",
year = "2006",
month = sep,
day = "25",
doi = "10.1109/LED.2006.882581",
language = "English",
volume = "27",
pages = "814--816",
journal = "IEEE electron device letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

Download

TY - JOUR

T1 - 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes 

AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Schmidt, M.

AU - Mollenhauer, T.

AU - Efavi, J. K.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Fissel, A.

AU - Osten, H. J.

AU - Kurz, H.

N1 - Funding Information: Manuscript received May 22, 2006; revised July 20, 2006. This work was supported by the German Federal Ministry of Education and Research (BMBF) under Contract 01M3142 (“KrisMOS”), AMD Saxony LLC and Company KG, Infineon Technologies AG, and Freescale Halbleiter Deutschland GmbH and Qimonda AG. The review of this letter was arranged by Editor B. Yu.

PY - 2006/9/25

Y1 - 2006/9/25

N2 - In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

AB - In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

KW - Epitaxial dielectric

KW - Fully silicided (FUSI)

KW - GdO

KW - High-k

KW - Metal gate

KW - NiSi

KW - Rare earth oxide

UR - http://www.scopus.com/inward/record.url?scp=33846089635&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.882581

DO - 10.1109/LED.2006.882581

M3 - Article

AN - SCOPUS:33846089635

VL - 27

SP - 814

EP - 816

JO - IEEE electron device letters

JF - IEEE electron device letters

SN - 0741-3106

IS - 10

ER -