Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2

Research output: Contribution to journal › Article › Research › peer review

Authors

  • A. Glamazda
  • A. Sharafeev
  • R. Bohle
  • P. Lemmens
  • K. Y. Choi
  • F. C. Chou
  • R. Sankar

External Research Organisations

  • B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine
  • Technische Universität Braunschweig
  • Sungkyunkwan University
  • Academia Sinica (AS)
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Details

Translated title of the contributionDoping from CDW to topological superconductivity: The role of defects on phonon scattering in the non-centrosymmetric PbxTaSe2
Original languageRussian
Pages (from-to)994-1002
Number of pages9
JournalFizika Nizkikh Temperatur
Volume47
Issue number11
Publication statusPublished - Nov 2021
Externally publishedYes

Abstract

The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

Keywords

    Raman spectroscopy, Topological materials, Transition metal dichalcogenides

ASJC Scopus subject areas

Cite this

Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2. / Glamazda, A.; Sharafeev, A.; Bohle, R. et al.
In: Fizika Nizkikh Temperatur, Vol. 47, No. 11, 11.2021, p. 994-1002.

Research output: Contribution to journal › Article › Research › peer review

Glamazda, A, Sharafeev, A, Bohle, R, Lemmens, P, Choi, KY, Chou, FC & Sankar, R 2021, 'Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2', Fizika Nizkikh Temperatur, vol. 47, no. 11, pp. 994-1002.
Glamazda, A., Sharafeev, A., Bohle, R., Lemmens, P., Choi, K. Y., Chou, F. C., & Sankar, R. (2021). Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2. Fizika Nizkikh Temperatur, 47(11), 994-1002.
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title = "Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2",
abstract = "The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.",
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author = "A. Glamazda and A. Sharafeev and R. Bohle and P. Lemmens and Choi, {K. Y.} and Chou, {F. C.} and R. Sankar",
note = "Funding information: We are grateful to V. Gnezdilov, Yu. G. Pashkevich, and A. M{\"o}ller for an important discussion. This research was funded by the DFG Excellence Cluster Quantum-Frontiers, EXC 2123-390837967 and DFG Le967/16-1. RS acknowledges the financial support provided by the Ministry of Science and Technology in Taiwan under project number MOST-110-2112-M-001-065-MY3 and Academia Sinica for the budget of AS-iMATE-109-13. KYC was supported by the National Research Foundation (NRF) of Korea (Grants No. 2020R1A2C3012367).",
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month = nov,
language = "Russian",
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T1 - Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2

AU - Glamazda, A.

AU - Sharafeev, A.

AU - Bohle, R.

AU - Lemmens, P.

AU - Choi, K. Y.

AU - Chou, F. C.

AU - Sankar, R.

N1 - Funding information: We are grateful to V. Gnezdilov, Yu. G. Pashkevich, and A. Möller for an important discussion. This research was funded by the DFG Excellence Cluster Quantum-Frontiers, EXC 2123-390837967 and DFG Le967/16-1. RS acknowledges the financial support provided by the Ministry of Science and Technology in Taiwan under project number MOST-110-2112-M-001-065-MY3 and Academia Sinica for the budget of AS-iMATE-109-13. KYC was supported by the National Research Foundation (NRF) of Korea (Grants No. 2020R1A2C3012367).

PY - 2021/11

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N2 - The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

AB - The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

KW - Raman spectroscopy

KW - Topological materials

KW - Transition metal dichalcogenides

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JO - Fizika Nizkikh Temperatur

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