Institute of Electronic Materials and Devices - Publications

181 - 200 out of 277Page size: 20

Sort by: Publication date

Publications

2010
Published
Downscaling of defect-passivated Gd₂O₃ thin films on p-Si(0 0 1) wafers grown by H₂O-assisted atomic layer deposition
Ranjith, R., Laha, A., Bugiel, E., Osten, H. J., Xu, K., Milanov, A. P. & Devi, A., 9 Sept 2010, In: Semiconductor Science and Technology. 25, 10, 105001.
Research output: Contribution to journal › Article › Research › peer review
Published
Preparation and electrical characterization of amorphous BaO, SrO and Ba_0.7Sr_0.3O as high-k gate dielectrics
Müller-Sajak, D., Cosceev, A., Brand, C., Hofmann, K. R. & Pfnür, H., 10 Jul 2010, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 2, p. 316-320 5 p.
Research output: Contribution to journal › Conference article › Research › peer review
Published
Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si
Wang, J., Liu, T., Wang, Z., Bugiel, E., Laha, A., Watahiki, T., Shayduk, R., Braun, W., Fissel, A. & Osten, H. J., 15 Apr 2010, In: Materials letters. 64, 7, p. 866-868 3 p.
Research output: Contribution to journal › Article › Research › peer review
Published
Single-crystalline Si grown on single-crystalline Gd₂O₃ by modified solid-phase epitaxy
Fissel, A., Dargis, R., Bugiel, E., Schwendt, D., Wietler, T., Krügener, J., Laha, A. & Osten, H. J., 26 Feb 2010, In: THIN SOLID FILMS. 518, 9, p. 2546-2550 5 p.
Research output: Contribution to journal › Article › Research › peer review
Published
Role of boron and (√3×√3)-B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study
Fissel, A., Krügener, J., Schwendt, D. & Osten, H. J., Feb 2010, In: Physica Status Solidi (A) Applications and Materials Science. 207, 2, p. 245-253 9 p.
Research output: Contribution to journal › Article › Research › peer review
Published
Growth of Crystalline Gd₂O₃ Thin Films with a High-Quality Interface on Si(100) by Low-Temperature H₂O-Assisted Atomic Layer Deposition
Milanov, A. P., Xu, K., Laha, A., Bugiel, E., Ranjith, R., Schwendt, D., Osten, H. J., Parala, H., Fischer, R. A. & Devi, A., 13 Jan 2010, In: Journal of the American Chemical Society. 132, 1, p. 36-37 2 p.
Research output: Contribution to journal › Article › Research › peer review
Published
Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations
Endres, R., Gottlob, H. D. B., Schmidt, M., Schwendt, D., Osten, H. J. & Schwalke, U., 2010, Physics and Technology of High-k Materials 8. 3 ed. Electrochemical Society, Inc., p. 25-29 5 p. (ECS Transactions; vol. 33, no. 3).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
Effect of Ge passivation on interfacial properties of crystalline Gd₂ O₃ thin films grown on Si substrates
Laha, A., Fissel, A. & Osten, H. J., 2010, In: Applied physics letters. 96, 7, 072903.
Research output: Contribution to journal › Article › Research › peer review
Published
Effect of SiO₂ ticknesses in thermal-SiO₂/PECVD-SiN stacks on surface passivation of n-Type Cz silicon substrates
Larionova, Y., Harder, N. P. & Brendel, R., 2010, 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. p. 1207-1209 3 p. 5614072. (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
Influence of emitter profile characteristics on thermal stability and passiviation quality of A-Si/SiN_X-passivated boron emitters
Kessler, M., Gatz, S., Altermatt, P., Harder, N. P. & Brendel, R., 2010, 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. p. 359-363 5 p. 5616868. (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications
Laha, A., Bugiel, E., Ranjith, R., Osten, H. J., Fissel, A., Afanas'Ev, V. V. & Badylevich, M., 2010, 2010 International Conference on Microelectronics, ICM'10. p. 248-251 4 p. 5696129. (Proceedings of the International Conference on Microelectronics, ICM).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices
Osten, H. J., Laha, A. & Fissel, A., 2010, 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. p. 38-42 5 p. 5437795. (4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
The role of thermal and electronic pressure in the picosecond acoustic response of femtosecond laser-excited solids
Shymanovich, U., Nicoul, M., Kähle, S., Lu, W., Tarasevitch, A., Zhou, P., Wietler, T., Von Hoegen, M. H., Von Der Linde, D. & Sokolowski-Tinten, K., 2010, Ultrafast Processes in Materials Science. p. 111-116 6 p. (Materials Research Society Symposium Proceedings; vol. 1230).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
Trapping-related recombination of charge carriers in silicon
Gogolin, R., Harder, N. P. & Brendel, R., 2010, 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. p. 443-446 4 p. 5616743. (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
2009
Published
Influence of Sb induced surface faceting on structural properties of relaxed Ge films on Si(001)
Wietler, T. F., Rugeramigabo, E. P., Bugiel, E. & Hofmann, K. R., 1 Dec 2009, Physics of Semiconductors - 29th International Conference, ICPS 29. p. 15-16 2 p. (AIP Conference Proceedings; vol. 1199).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
Published
The thermal stability of Pt/epitaxial Gd₂O₃ /Si stacks and its dependence on heat-treatment ambient
Lipp, E., Osten, H. J. & Eizenberg, M., 1 Dec 2009, In: Journal of applied physics. 106, 11, 113505.
Research output: Contribution to journal › Article › Research › peer review
Published
Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide
Laha, A., Bugiel, E., Jestremski, M., Ranjith, R., Fissel, A. & Osten, H. J., 29 Oct 2009, In: NANOTECHNOLOGY. 20, 47, 475604.
Research output: Contribution to journal › Article › Research › peer review
Published
Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba_0.7Sr_0.3O on Si(001) as alternative gate dielectrics
Cosceev, A., Müller-Sajak, D., Pfnür, H. & Hofmann, K. R., 22 Oct 2009, In: Thin Solid Films. 518, 6 SUPPL. 1, p. S281-S284
Research output: Contribution to journal › Article › Research › peer review
Published
Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd₂O₃
Afanas'ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J. & Fissel, A., 7 Sept 2009, In: Applied physics letters. 95, 10, 102107.
Research output: Contribution to journal › Article › Research › peer review
Published
Epitaxial Lanthanide Oxide based Gate Dielectrics
Osten, H. J., Laha, A. & Fissel, A., 17 Aug 2009, CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society, p. 97-108 12 p. (Materials Research Society Symposium Proceedings; vol. 1155).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Previous 1...6 7 8 9 10 11 12 13 14 Next