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Institute of Electronic Materials and Devices

Organisational unit: Institute

Type of address: Visitor address.
Schneiderberg 32
30167
Hannover
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Publications

  1. 2013
  2. Published

    Crystalline Oxides on Silicon

    Osten, H. J., 26 Jun 2013, Springer Series in Advanced Microelectronics. Springer Verlag, p. 395-423 29 p. (Springer Series in Advanced Microelectronics; vol. 43).

    Research output: Chapter in book/report/conference proceedingContribution to book/anthologyResearchpeer review

  3. Published

    Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon

    Laha, A., Fissel, A. & Osten, H. J., 20 May 2013, In: Applied physics letters. 102, 20, 202902.

    Research output: Contribution to journalArticleResearchpeer review

  4. Published

    Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si

    Chaudhuri, A. R., Fissel, A. & Osten, H. J., 14 May 2013, In: Journal of applied physics. 113, 18, 184108.

    Research output: Contribution to journalArticleResearchpeer review

  5. Published

    Epitaxial thin films of BaSrO as gate dielectric

    Islam, S., Müller-Sajak, D., Hofmann, K. R. & Pfnür, H., 30 Mar 2013, In: Microelectronic Engineering. 109, p. 152-155 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  6. Published

    Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

    Roy Chaudhuri, A., Fissel, A., Archakam, V. R. & Osten, H. J., 14 Jan 2013, In: Applied physics letters. 102, 2, 022904.

    Research output: Contribution to journalArticleResearchpeer review

  7. Published

    Weak light performance of PERC, PERT and standard industrial solar cells

    Krügener, J. & Harder, N. P., 2013, In: Energy Procedia. 38, p. 108-113 6 p.

    Research output: Contribution to journalConference articleResearchpeer review

  8. 2012
  9. Published

    Electrical characterization and modelling of n-n Ge-Si heterojunctions with relatively low interface state densities

    Peibst, R., Rugeramigabo, E. P. & Hofmann, K. R., 1 Dec 2012, In: Journal of applied physics. 112, 12, 124502.

    Research output: Contribution to journalArticleResearchpeer review

  10. Published

    Preparation of large step-free mesas on Si(111) by molecular beam epitaxy

    Fissel, A., Krügener, J. & Osten, H. J., Oct 2012, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 10-11, p. 2050-2053 4 p.

    Research output: Contribution to journalArticleResearchpeer review

  11. Published

    Relaxed germanium on porous silicon substrates

    Wietler, T. F., Rugeramigabo, E. P., Bugiel, E. & Rojas, E. G., 30 Jul 2012, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. p. 150-151 2 p. 6222502. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

    Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

  12. Published

    Temperature stability of ultra-thin mixed BaSr-oxide layers and their transformation

    Müller-Sajak, D., Islam, S., Pfnür, H. & Hofmann, K. R., 2 Jul 2012, In: Nanotechnology. 23, 30, 305202.

    Research output: Contribution to journalArticleResearchpeer review

  13. Published

    Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

    Schwendt, D., Osten, H. J., Shekhter, P. & Eizenberg, M., 4 Jun 2012, In: Applied physics letters. 100, 23, 232905.

    Research output: Contribution to journalArticleResearchpeer review

  14. Published

    Atomic layer deposition of Gd2O3 and Dy2O3: A study of the ALD Characteristics and Structural and Electrical Properties

    Xu, K., Ranjith, R., Laha, A., Parala, H., Milanov, A. P., Fischer, R. A., Bugiel, E., Feydt, J., Irsen, S., Toader, T., Bock, C., Rogalla, D., Osten, H. J., Kunze, U. & Devi, A., 28 Feb 2012, In: Chemistry of materials. 24, 4, p. 651-658 8 p.

    Research output: Contribution to journalArticleResearchpeer review

  15. Published

    Carbon-mediated growth of thin, fully relaxed germanium films on silicon

    Tetzlaff, D., Wietler, T. F., Bugiel, E. & Osten, H. J., 2 Jan 2012, In: Applied physics letters. 100, 1, 012108.

    Research output: Contribution to journalArticleResearchpeer review

  16. 2011
  17. Published

    Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties

    Laha, A., Ai, B., Babu, P. R. P., Fissel, A. & Osten, H. J., 10 Oct 2011, In: Applied physics letters. 99, 15, 152902.

    Research output: Contribution to journalArticleResearchpeer review

  18. Published

    Interface and Bulk Properties of High-k Gadolinium and Neodymium Oxides on Silicon

    Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J. & Laha, A., 4 Jul 2011, Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices. p. 167-178 12 p. (Advanced Materials Research; vol. 276).

    Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

  19. Published

    Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)

    Fissel, A., Krügener, J. & Osten, H. J., 15 May 2011, In: Journal of crystal growth. 323, 1, p. 144-149 6 p.

    Research output: Contribution to journalArticleResearchpeer review

  20. Published

    Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)

    Krügener, J., Osten, H. J. & Fissel, A., 3 May 2011, In: Physical Review B - Condensed Matter and Materials Physics. 83, 20, 205303.

    Research output: Contribution to journalArticleResearchpeer review

  21. Published

    Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors

    Lipp, E., Shahar, Z., Bittel, B. C., Lenahan, P. M., Schwendt, D., Osten, H. J. & Eizenberg, M., 1 Apr 2011, In: Journal of applied physics. 109, 7, 073724.

    Research output: Contribution to journalArticleResearchpeer review

  22. Published

    Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates

    Laha, A., Bin, A., Babu, P. R. P., Fissel, A. & Osten, H. J., 2011, Physics and Technology of High-k Materials 9. 3 ed. Electrochemical Society, Inc., p. 101-107 7 p. (ECS Transactions; vol. 41, no. 3).

    Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

  23. 2010
  24. Published

    Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide

    Dargis, R., Fissel, A., Schwendt, D., Bugiel, E., Krügener, J., Wietler, T., Laha, A. & Osten, H. J., 21 Oct 2010, In: VACUUM. 85, 4, p. 523-526 4 p.

    Research output: Contribution to journalArticleResearchpeer review

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