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Institute of Electronic Materials and Devices

Organisational unit: Institute

Type of address: Visitor address.
Schneiderberg 32
30167
Hannover
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141 - 160 out of 278Page size: 20

Publications

  1. 2015
  2. Published

    Impact of surface phase coexistence on the development of step-free areas on Si(111)

    Fissel, A., Chaudhuri, A. R., Krügener, J., Gribisch, P. & Osten, H. J., 26 Jun 2015, In: Frontiers of materials science. 9, 2, p. 141-146 6 p.

    Research output: Contribution to journal › Article › Research › peer review

  3. Published

    Basic Study on the Influence of Glass Composition and Aluminum Content on the Ag/Al Paste Contact Formation to Boron Emitters

    Körner, S., Kiefer, F., Peibst, R., Heinemeyer, F., Krügener, J. & Eberstein, M., 1 Apr 2015, In: Energy Procedia. 67, p. 20-30 11 p.

    Research output: Contribution to journal › Conference article › Research › peer review

  4. Published

    Ion implantation for poly-Si passivated back-junction back-contacted solar cells

    Römer, U., Peibst, R., Ohrdes, T., Lim, B., Krügener, J., Wietler, T. & Brendel, R., 1 Mar 2015, In: IEEE journal of photovoltaics. 5, 2, p. 507-514 8 p., 7006679.

    Research output: Contribution to journal › Article › Research › peer review

  5. Published

    Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells

    Kiefer, F., Peibst, R., Ohrdes, T., Dullweber, T., Krügener, J., Osten, H. J., Schöllhorn, C., Grohe, A. & Brendel, R., Feb 2015, In: Physica Status Solidi (A) Applications and Materials Science. 212, 2, p. 291-297 7 p.

    Research output: Contribution to journal › Article › Research › peer review

  6. Published

    Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

    Krugener, J., Peibst, R., Alexander, W., Bugiel, E., Ohrdes, T., Kiefer, F., Schollhorn, C., Grohe, A., Brendel, R. & Osten, H., 1 Jan 2015, In: IEEE journal of photovoltaics. 5, 1, p. 166-173 8 p., 6970768.

    Research output: Contribution to journal › Article › Research › peer review

  7. 2014
  8. Published

    The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    Shekhter, P., Chaudhuri, A. R., Laha, A., Yehezkel, S., Shriki, A., Osten, H. J. & Eizenberg, M., 30 Dec 2014, In: Applied physics letters. 105, 26, 262901.

    Research output: Contribution to journal › Article › Research › peer review

  9. Published

    Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

    Römer, U., Peibst, R., Ohrdes, T., Lim, B., Krügener, J., Bugiel, E., Wietler, T. & Brendel, R., Dec 2014, In: Solar Energy Materials and Solar Cells. 131, p. 85-91 7 p.

    Research output: Contribution to journal › Article › Research › peer review

  10. Published

    Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications

    Krugener, J., Bugiel, E., Osten, H., Peibst, R., Kiefer, F., Ohrdes, T. & Brendel, R., 29 Oct 2014, Proceedings of the International Conference on Ion Implantation Technology. Rao, M. V. (ed.). Institute of Electrical and Electronics Engineers Inc., 6940060. (Proceedings of the International Conference on Ion Implantation Technology).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  11. Published

    Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

    Peibst, R., Romer, U., Larionova, Y., Schulte-Huxel, H., Ohrdes, T., Haberle, M., Lim, B., Krugener, J., Stichtenoth, D., Wutherich, T., Schollhorn, C., Graff, J. & Brendel, R., 15 Oct 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 852-856 5 p. 6925049

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  12. Published

    Emitter recombination current densities of boron emitters with silver/aluminum pastes

    Kiefer, F., Peibst, R., Ohrdes, T., Krügener, J., Osten, H. J. & Brendel, R., 15 Oct 2014, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., p. 2808-2812 5 p. 6925514

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  13. Published

    Structural analysis of textured silicon surfaces after ion implantation under tilted angle

    Krügener, J., Bugiel, E., Peibst, R., Kiefer, F., Ohrdes, T., Brendel, R. & Osten, H., 1 Sept 2014, In: Semiconductor Science and Technology. 29, 9, 095004.

    Research output: Contribution to journal › Article › Research › peer review

  14. Published

    A simple model describing the symmetric I-V characteristics of p polycrystalline Si/n monocrystalline Si, and n polycrystalline Si/p monocrystalline Si junctions

    Peibst, R., Römer, U., Hofmann, K. R., Lim, B., Wietler, T. F., Krügener, J., Harder, N. P. & Brendel, R., May 2014, In: IEEE journal of photovoltaics. 4, 3, p. 841-850 10 p., 6800058.

    Research output: Contribution to journal › Article › Research › peer review

  15. Published

    Surfactant-mediated epitaxy of silicon germanium films on silicon (001) substrates

    Wietler, T. F., Schmidt, J., Tetzlaff, D. & Bugiel, E., 30 Apr 2014, In: THIN SOLID FILMS. 557, p. 27-30 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  16. Published

    Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

    Roy Chaudhuri, A., Fissel, A. & Osten, H. J., 8 Jan 2014, In: Applied physics letters. 104, 1, 012906.

    Research output: Contribution to journal › Article › Research › peer review

  17. Published

    Optical emission characteristics of compressively strained Ge films

    Katiyar, A. K., Grimm, A., Rakesh, A., Bar, R., Wietler, T., Osten, H. J. & Ray, S. K., 2014.

    Research output: Contribution to conference › Paper › Research › peer review

  18. Published

    Tuning dielectric properties of epitaxial lanthanide oxides on silicon

    Osten, H. J., Schwendt, D., Chaudhuri, A. R., Fissel, A., Shekhter, P. & Eizenberg, M., 2014, Dielectrics for nanosystems 6: materials science, processing, reliability, and manufacturing. The Electrochemical Society, p. 3-9 7 p. (ECS Transactions; vol. 61, no. 2).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  19. 2013
  20. Published

    MBE-grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device

    Manna, S., Aluguri, R., Katiyar, A., Das, S., Laha, A., Osten, H. J. & Ray, S. K., 20 Dec 2013, In: NANOTECHNOLOGY. 24, 50, 505709.

    Research output: Contribution to journal › Article › Research › peer review

  21. Published

    Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-"1 × 1" surface phase transition

    Krügener, J., Osten, H. J. & Fissel, A., Dec 2013, In: Surface science. 618, p. 27-35 9 p.

    Research output: Contribution to journal › Article › Research › peer review

  22. Published

    Epitaxial Gd2O3 on strained Si1-xGe x layers for next generation complementary metal oxide semiconductor device application

    Ghosh, K., Das, S., Fissel, A., Osten, H. J. & Laha, A., 7 Oct 2013, In: Applied physics letters. 103, 15, 153501.

    Research output: Contribution to journal › Article › Research › peer review

  23. Published

    Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy

    Tetzlaff, D., Wietler, T. F., Bugiel, E. & Osten, H. J., 1 Sept 2013, In: Journal of crystal growth. 378, p. 254-258 5 p.

    Research output: Contribution to journal › Article › Research › peer review

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