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Institute of Electronic Materials and Devices

Organisational unit: Institute

Type of address: Visitor address.
Schneiderberg 32
30167
Hannover
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261 - 276 out of 276Page size: 20

Publications

  1. 2006
  2. Published

    Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited germanium

    Sokolowski-Tinten, K., Shymanovich, U., Nicoul, M., Blums, J., Tarasevitch, A., Horn-von-Hoegen, M., von der Linde, D., Morak, A. & Wietler, T., 2006, International Conference on Ultrafast Phenomena, UP 2006. OSA - The Optical Society, (Optics InfoBase Conference Papers).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  3. Published

    Optical properties, elasto-optical effects, and critical-point parameters of biaxially stressed Si1-yCy alloys on Si (001)

    Zollner, S., Vartanian, V., Liu, J. P., Zaumseil, P., Osten, H. J., Demkov, A. A. & Nguyen, B. Y., 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 1715973. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; vol. 2006).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  4. 2005
  5. Published

    Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities

    Wietler, T. F., Bugiel, E. & Hofmann, K. R., 24 Oct 2005, In: Applied physics letters. 87, 18, p. 1-3 3 p., 182102.

    Research output: Contribution to journal › Article › Research › peer review

  6. Published

    MBE growth and properties of epitaxial metal oxides for high-κ dielectrics

    Osten, H. J., Bugiel, E., Kirfel, O., Czernohorsky, M. & Fissel, A., 1 May 2005, In: Journal of crystal growth. 278, 1-4, p. 18-24 7 p.

    Research output: Contribution to journal › Conference article › Research › peer review

  7. Published

    Epitaxial growth of non-cubic silicon

    Fissel, A., Wang, C., Bugiel, E. & Osten, H. J., Mar 2005, In: Microelectronics journal. 36, 3-6, p. 506-509 4 p.

    Research output: Contribution to journal › Conference article › Research › peer review

  8. Published

    Advances in surfactant-mediated growth of germanium on silicon: High-quality p-type Ge films on Si

    Wietler, T. F., Ott, A., Bugiel, E. & Hofmann, K. R., Feb 2005, In: Materials Science in Semiconductor Processing. 8, 1-3 SPEC. ISS., p. 73-77 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  9. Published

    Ca F2 SiCa F2 resonant tunneling diodes grown by B surfactant-mediated epitaxy

    Wang, C. R., Bierkandt, M., Paprotta, S., Wietler, T. & Hofmann, K. R., 14 Jan 2005, In: Applied physics letters. 86, 3, p. 1-3 3 p., 033111.

    Research output: Contribution to journal › Article › Research › peer review

  10. Published

    Carbon doping of sige

    Osten, H. J., 1 Jan 2005, Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy. p. 2.9-157-2.9-170

    Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review

  11. Published

    A novel thin buffer concept for epitaxial growth of relaxed SiGe layers with low threading dislocation density

    Liu, J. P., Wong, L. H., Sohn, D. K., Hsia, L. C., Chan, L., Wong, C. C. & Osten, H. J., Jan 2005, In: Electrochemical and Solid-State Letters. 8, 2, p. G60-G62

    Research output: Contribution to journal › Article › Research › peer review

  12. 2004
  13. Published

    Boron surfactant enhanced growth of thin Si films on CaF2/SI

    Wang, C. R., Müller, B. H., Bugiel, E., Wietler, T., Bierkandt, M., Hofmann, K. R. & Zaumseil, P., 7 Oct 2004, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 22, 6, p. 2246-2250 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  14. Published

    Epitaxial high-κ dielectrics on silicon

    Osten, H. J., 2004, ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes. Osvald, J., Hascik, S., Osvald, J. & Hascik, S. (eds.). p. 155-162 8 p. (ASDAM 2004 - Conference Proceedings, 5th International Conference on Semiconductor Devices and Microsystmes).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  15. 2003
  16. Published

    Epitaxial praseodymium oxide: a new high-K dielectric

    Osten, H. J., Bugiel, E. & Fissel, A., Dec 2003, In: Solid-State Electronics. 47, 12, p. 2161-2165 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  17. Published

    Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

    Fissel, A., Osten, H. J. & Bugiel, E., 5 Aug 2003, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 4, p. 1765-1772 8 p.

    Research output: Contribution to journal › Article › Research › peer review

  18. Published

    Epitaxial praseodymium oxide: A new high-K dielectric

    Osten, H. J., Bugiel, E. & Fissel, A., 1 Apr 2003, In: Materials Research Society Symposium - Proceedings. 744, p. 15-24 10 p.

    Research output: Contribution to journal › Conference article › Research › peer review

  19. 2000
  20. Published

    Carbon doped SiGe heterojunction bipolar transistor module suitable for integration in a deep submicron CMOS process

    Osten, H. J., Knoll, D., Heinemann, B., Rucker, H. & Ehwald, K. E., 2000, p. 19. 1 p.

    Research output: Contribution to conference › Paper › Research › peer review

  21. 1995
  22. Published

    Growth and properties of strained Si1-x-yGexC y layers

    Jain, S. C., Osten, H. J., Dietrich, B. & Rücker, H., 1995, In: Semiconductor Science and Technology. 10, 10, p. 1289-1302 14 p., 001.

    Research output: Contribution to journal › Review article › Research › peer review

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