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Institute of Electronic Materials and Devices

Organisational unit: Institute

Type of address: Visitor address.
Schneiderberg 32
30167
Hannover
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241 - 260 out of 276Page size: 20

Publications

  1. 2007
  2. Published

    Thermal stability of pt/epitaxial Gd2O3/Si stacks

    Lipp, E., Eizenberg, M., Czernohorsky, M. & Osten, H. J., 2007, Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. p. 64-69 6 p. (Materials Research Society Symposium Proceedings; vol. 996).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  3. 2006
  4. Published

    Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon

    Osten, H. J., Czernohorsky, M., Bugiel, E., Kuehne, D. & Fissel, A., 1 Dec 2006, In: Materials Research Society Symposium Proceedings. 917, 1, p. 137-142 6 p.

    Research output: Contribution to journal › Conference article › Research › peer review

  5. Published

    Dielectric functions, elasto-optical effects, and critical-point parameters of biaxially stressed Si1-yCy alloys on Si (0 0 1)

    Zollner, S., Liu, J. P., Zaumseil, P., Osten, H. J. & Demkov, A. A., 28 Nov 2006, In: Semiconductor Science and Technology. 22, 1, p. S13-S20 S04.

    Research output: Contribution to journal › Article › Research › peer review

  6. Published

    Molecular Beam Epitaxy of Rare-Earth Oxides

    Osten, H. J., Bugiel, E., Czernohorsky, M., Elassar, Z., Kirfel, O. & Fissel, A., 28 Oct 2006, Rare Earth Oxide Thin Films: Growth, Characterization, and Applications. Fanciulli, M. & Scarel, G. (eds.). p. 101-114 14 p. (Topics in Applied Physics; vol. 106).

    Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review

  7. Published

    Formation of Si twinning-superlattice: First step towards Si polytype growth

    Fissel, A., Bugiel, E., Wang, C. R. & Osten, H. J., 15 Oct 2006, In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 134, 2-3 SPEC. ISS., p. 138-141 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  8. Published

    Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high- K application

    Laha, A., Osten, H. J. & Fissel, A., 5 Oct 2006, In: Applied physics letters. 89, 14, 143514.

    Research output: Contribution to journal › Article › Research › peer review

  9. Published

    Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application

    Fissel, A., Czemohorsky, M., Dargis, R. & Osten, H. J., Oct 2006, In: Superlattices and microstructures. 40, 4-6, p. 551-556 6 p.

    Research output: Contribution to journal › Article › Research › peer review

  10. Published

    0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes 

    Gottlob, H. D. B., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H. J. & Kurz, H., 25 Sept 2006, In: IEEE electron device letters. 27, 10, p. 814-816 3 p.

    Research output: Contribution to journal › Article › Research › peer review

  11. Published

    Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

    Fissel, A., Kuehne, D., Bugiel, E. & Osten, H. J., 1 Sept 2006, In: Materials Research Society Symposium Proceedings. 928, 1, p. 7-12 6 p.

    Research output: Contribution to journal › Article › Research › peer review

  12. Published

    Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(1 1 1) and Si(0 0 1) substrates

    Wietler, T. F., Bugiel, E. & Hofmann, K. R., Aug 2006, In: Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 659-663 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  13. Published

    Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

    Fissel, A., Czernohorsky, M. & Osten, H. J., 26 Jul 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 4, p. 2115-2118 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  14. Published

    Fabrication of single-crystalline insulator/Si/insulator nanostructures

    Fissel, A., Kühne, D., Bugiel, E. & Osten, H. J., 25 Jul 2006, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24, 4, p. 2041-2046 6 p.

    Research output: Contribution to journal › Article › Research › peer review

  15. Published

    Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001)

    Wietler, T. F., Bugiel, E. & Hofmann, K. R., 5 Jun 2006, In: THIN SOLID FILMS. 508, 1-2, p. 6-9 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  16. Published

    CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

    Gottlob, H. D. B., Echtermeyer, T., Mollenhauer, T., Efavi, J. K., Schmidt, M., Wahlbrink, T., Lemme, M. C., Kurz, H., Czernohorsky, M., Bugiel, E., Osten, H. J. & Fissel, A., Jun 2006, In: Solid-State Electronics. 50, 6, p. 979-985 7 p.

    Research output: Contribution to journal › Article › Research › peer review

  17. Published

    Formation of twinning-superlattice regions by artificial stacking of Si layers

    Fissel, A., Bugiel, E., Wang, C. R. & Osten, H. J., 1 May 2006, In: Journal of crystal growth. 290, 2, p. 392-397 6 p.

    Research output: Contribution to journal › Article › Research › peer review

  18. Published

    Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application

    Laha, A., Bugiel, E., Osten, H. J. & Fissel, A., 25 Apr 2006, In: Applied physics letters. 88, 17, 172107.

    Research output: Contribution to journal › Article › Research › peer review

  19. Published

    Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

    Fissel, A., Kühne, D., Bugiel, E. & Osten, H. J., 10 Apr 2006, In: Applied physics letters. 88, 15, 153105.

    Research output: Contribution to journal › Article › Research › peer review

  20. Published

    Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

    Czernohorsky, M., Bugiel, E., Osten, H. J., Fissel, A. & Kirfel, O., 10 Apr 2006, In: Applied physics letters. 88, 15, 152905.

    Research output: Contribution to journal › Article › Research › peer review

  21. Published

    Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

    Fissel, A., Elassar, Z., Kirfel, O., Bugiel, E., Czernohorsky, M. & Osten, H. J., 5 Apr 2006, In: Journal of applied physics. 99, 7, 074105.

    Research output: Contribution to journal › Article › Research › peer review

  22. Published

    Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics

    Gottlob, H. D. B., Echtermeyer, T., Mollenhauer, T., Schmidt, M., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Kurz, H., Endres, R., Stefanov, Y., Schwalke, U., Czernohorsky, M., Bugiel, E., Fissel, A. & Osten, H. J., 2006, ESSDERC 2006 : Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society, p. 150-153 4 p. 4099878

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

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