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Institute of Electronic Materials and Devices

Organisational unit: Institute

Type of address: Visitor address.
Schneiderberg 32
30167
Hannover
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201 - 220 out of 276Page size: 20

Publications

  1. 2009
  2. Published

    Development of Multi-Step Procedure for Epitaxial Growth of Crystalline Silicon on Rare-Earth-Metal Oxide for SOI-Applications

    Dargis, R., Fissel, A., Bugiel, E., Schwendt, D., Wietler, T., Laha, A. & Osten, H. J., 4 Apr 2009, In: e-Journal of Surface Science and Nanotechnology. 7, p. 405-408 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  3. Published

    Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: A diffraction study

    Wang, J. X., Laha, A., Fissel, A., Schwendt, D., Dargis, R., Watahiki, T., Shayduk, R., Braun, W., Liu, T. M. & Osten, H. J., 17 Mar 2009, In: Semiconductor Science and Technology. 24, 4, 045021.

    Research output: Contribution to journal › Article › Research › peer review

  4. Published

    Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI-Applications

    Dargis, R., Fissel, A., Bugiel, E., Schwendt, D., Wietler, T., Laha, A. & Osten, H. J., 12 Mar 2009, In: Medziagotyra. 15, 1, p. 11-15 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  5. Published

    Integration of low dimensional crystalline Si into functional epitaxial oxides

    Laha, A., Bugiel, E., Dargis, R., Schwendt, D., Badylevich, M., Afanas'ev, V. V., Stesmans, A., Fissel, A. & Osten, H. J., Mar 2009, In: Microelectronics journal. 40, 3, p. 633-637 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  6. Published

    Complementary metal oxide semiconductor integration of epitaxial Gd2 O3

    Lemme, M. C., Gottlob, H. D. B., Echtermeyer, T. J., Schmidt, M., Kurz, H., Endres, R., Schwalke, U., Czernohorkky, M., Tetzlaff, D. & Osten, H. J., 9 Feb 2009, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27, 1, p. 258-261 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  7. Published

    Influence of boron on the initial stages of Si molecular beam epitaxy on Si(1 1 1) studied by reflection high-energy electron diffraction

    Fissel, A., Krügener, J. & Osten, H. J., 1 Feb 2009, In: Surface science. 603, 3, p. 477-481 5 p.

    Research output: Contribution to journal › Article › Research › peer review

  8. Published

    Effect of Domain Boundaries on Dielectric Properties of Lanthanide Oxide based Gate Dielectrics

    Laha, A., Bugiel, E., Wang, J. X., Osten, H. J. & Fissel, A., 2009, 3rd International Conference on Signals, Circuits and Systems, SCS 2009. 5414203. (3rd International Conference on Signals, Circuits and Systems, SCS 2009).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  9. Published

    Growth of Epitaxial Lanthanide Oxide based Gate Dielectrics

    Osten, H. J., Laha, A., Bugiel, E., Schwendt, D. & Fissel, A., 2009, 2009 3rd International Conference on Signals, Circuits & Systems: (SCS). 5414212

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  10. Published

    Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon

    Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J. & Laha, A., 2009, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7. 6 ed. Electrochemical Society, Inc., p. 353-358 6 p. (ECS Transactions; vol. 25, no. 6).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  11. Published

    Stability of crystalline Gd2O3 thin films on silicon during post-growth processing

    Schwendt, D., Tetzlaff, D., Bugiel, E., Osten, H. J. & Gottlob, H. D. B., 2009, 3rd International Conference on Signals, Circuits and Systems, SCS 2009. 5414206. (3rd International Conference on Signals, Circuits and Systems, SCS 2009).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  12. Published

    Structural and strain relaxation study of epitaxially grown nanothick Nd2O3/Si(111) heterostructure

    Wang, J., Laha, A., Fissel, A., Schwendt, D., Dargis, R., Watahiki, T., Shayduk, R., Braun, W., Liu, T. & Osten, H. J., 2009, 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009. p. 436-440 5 p. 5068613. (4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009).

    Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

  13. 2008
  14. Published

    Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals

    Badylevich, M., Shamuilia, S., Afanas'ev, V. V., Stesmans, A., Laha, A., Osten, H. J. & Fissel, A., Dec 2008, In: Microelectronic engineering. 85, 12, p. 2382-2384 3 p.

    Research output: Contribution to journal › Article › Research › peer review

  15. Published

    Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications

    Laha, A., Bugiel, E., Fissel, A. & Osten, H. J., Dec 2008, In: Microelectronic engineering. 85, 12, p. 2350-2353 4 p.

    Research output: Contribution to journal › Article › Research › peer review

  16. Published

    Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon

    Wietler, T. F., Bugiel, E. & Hofmann, K. R., 30 Nov 2008, In: Applied surface science. 255, 3, p. 778-780 3 p.

    Research output: Contribution to journal › Article › Research › peer review

  17. Published

    Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

    Lipp, E., Eizenberg, M., Czernohorsky, M. & Osten, H. J., 14 Nov 2008, In: Applied physics letters. 93, 19, 193513.

    Research output: Contribution to journal › Article › Research › peer review

  18. Published

    Band offsets between Si and epitaxial rare earth sesquioxides (RE 2O3, RE=La,Nd,Gd,Lu): Effect of 4f -shell occupancy

    Afanas'ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J., Fissel, A., Tian, W., Edge, L. F. & Schlom, D. G., 11 Nov 2008, In: Applied physics letters. 93, 19, 192105.

    Research output: Contribution to journal › Article › Research › peer review

  19. Published

    Effect of domain boundaries on the electrical properties of crystalline Gd2 O3 thin films

    Laha, A., Bugiel, E., Wang, J. X., Sun, Q. Q., Fissel, A. & Osten, H. J., 6 Nov 2008, In: Applied physics letters. 93, 18, 182907.

    Research output: Contribution to journal › Article › Research › peer review

  20. Published

    Relaxed germanium films on silicon (110)

    Wietler, T. F., Bugiel, E. & Hofmann, K. R., 3 Nov 2008, In: THIN SOLID FILMS. 517, 1, p. 272-274 3 p.

    Research output: Contribution to journal › Article › Research › peer review

  21. Published

    High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

    Raeissi, B., Piscator, J., Engström, O., Hall, S., Buiu, O., Lemme, M. C., Gottlob, H. D. B., Hurley, P. K., Cherkaoui, K. & Osten, H. J., Sept 2008, In: Solid-State Electronics. 52, 9, p. 1274-1279 6 p.

    Research output: Contribution to journal › Article › Research › peer review

  22. Published

    Observation of near interface oxide traps in single crystalline Nd2 O3 on Si(111) by quasistatic C-V method

    Sun, Q. Q., Laha, A., Ding, S. J., Zhang, D. W., Osten, H. J. & Fissel, A., 27 Aug 2008, In: Applied physics letters. 93, 8, 083509.

    Research output: Contribution to journal › Article › Research › peer review

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