Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • W. Winkler
  • J. Borngraeber
  • He Erzgraeber
  • Ha Erzgraeber
  • B. Heinemann
  • D. Knoll
  • H. J. Osten
  • M. Pierschel
  • K. Pressel
  • P. Schley

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksProceedings of the Custom Integrated Circuits Conference
Seiten351-358
Seitenumfang8
PublikationsstatusVeröffentlicht - 1999
Extern publiziertJa
Veranstaltung1999 21st IEEE Annual Custom Integrated Circuits Conference, CICC '99 - San Diego, USA / Vereinigte Staaten
Dauer: 16 Mai 1999 → 19 Mai 1999

Publikationsreihe

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Abstract

Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/fmax of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.

ASJC Scopus Sachgebiete

Zitieren

Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. / Winkler, W.; Borngraeber, J.; Erzgraeber, He et al.
Proceedings of the Custom Integrated Circuits Conference. 1999. S. 351-358 (Proceedings of the Custom Integrated Circuits Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Winkler, W, Borngraeber, J, Erzgraeber, H, Erzgraeber, H, Heinemann, B, Knoll, D, Osten, HJ, Pierschel, M, Pressel, K & Schley, P 1999, Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. in Proceedings of the Custom Integrated Circuits Conference. Proceedings of the Custom Integrated Circuits Conference, S. 351-358, 1999 21st IEEE Annual Custom Integrated Circuits Conference, CICC '99, San Diego, California, USA / Vereinigte Staaten, 16 Mai 1999.
Winkler, W., Borngraeber, J., Erzgraeber, H., Erzgraeber, H., Heinemann, B., Knoll, D., Osten, H. J., Pierschel, M., Pressel, K., & Schley, P. (1999). Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. In Proceedings of the Custom Integrated Circuits Conference (S. 351-358). (Proceedings of the Custom Integrated Circuits Conference).
Winkler W, Borngraeber J, Erzgraeber H, Erzgraeber H, Heinemann B, Knoll D et al. Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. in Proceedings of the Custom Integrated Circuits Conference. 1999. S. 351-358. (Proceedings of the Custom Integrated Circuits Conference).
Winkler, W. ; Borngraeber, J. ; Erzgraeber, He et al. / Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. Proceedings of the Custom Integrated Circuits Conference. 1999. S. 351-358 (Proceedings of the Custom Integrated Circuits Conference).
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title = "Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules",
abstract = "Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/fmax of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.",
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AU - Winkler, W.

AU - Borngraeber, J.

AU - Erzgraeber, He

AU - Erzgraeber, Ha

AU - Heinemann, B.

AU - Knoll, D.

AU - Osten, H. J.

AU - Pierschel, M.

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AU - Schley, P.

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AB - Despite rapid progress in the field of RF CMOS, there is a growing interest in SiGe bipolar technology for RF and high speed applications. We have developed a 0.8 μm SiGe HBT technology with ft/fmax of 45/50 GHz (standard version for prototyping foundry operations) and an advanced SiGe:C technology with ft/fmax of 50/90 GHz (experimental status). These technologies are low cost modules that allow integration into existing CMOS technologies with less than five additional masks. Further, a low parasitics module is introduced. In the first part of this paper, the technology of the modules is described. In the second part the devices for the design of RF circuits are presented. The spectrum of devices includes: bipolar transistors, polysilicon resistors, MIM capacitances, inductors and varicaps. In the third part circuit results are presented. They include ring oscillators, VCOs, an LNA and a divider for RF applications in the GHz range.

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