Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • H. Rücker
  • J. P. Liu
  • B. Heinemann

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)209-212
Seitenumfang4
FachzeitschriftMicroelectronic engineering
Jahrgang56
Ausgabenummer1-2
Frühes Online-Datum17 Apr. 2001
PublikationsstatusVeröffentlicht - Mai 2001
Extern publiziertJa

Abstract

Research on highly supersaturated, carbon-containing alloys on silicon substrates started only a few years ago. Meanwhile, knowledge has been accumulated on growth, strain manipulation, thermal stability, carbon effects on band structure and charge carrier transport. We review basic mechanical and electrical material properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001). Adding carbon alleviates some of the constraints for strained Si1-xGex, and opens new possibilities for device application of heteroepitaxial Si-based systems. The incorporation of carbon is beneficial for: (i) improving SiGe layer properties; (ii) creating layers with new properties; and (iii) controlling dopant diffusion in microelectronic devices. A large variety of applications in microelectronic devices appears likely. The first device application ready for production is the npn-SiGe:C heterojunction bipolar transistor (HBT) with excellent static and high frequency performance.

ASJC Scopus Sachgebiete

Zitieren

Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe. / Osten, H. J.; Rücker, H.; Liu, J. P. et al.
in: Microelectronic engineering, Jahrgang 56, Nr. 1-2, 05.2001, S. 209-212.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten HJ, Rücker H, Liu JP, Heinemann B. Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe. Microelectronic engineering. 2001 Mai;56(1-2):209-212. Epub 2001 Apr 17. doi: 10.1016/S0167-9317(00)00529-3
Osten, H. J. ; Rücker, H. ; Liu, J. P. et al. / Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe. in: Microelectronic engineering. 2001 ; Jahrgang 56, Nr. 1-2. S. 209-212.
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T1 - Wider latitude for sophisticated devices by incorporating carbon into crystalline Si or SiGe

AU - Osten, H. J.

AU - Rücker, H.

AU - Liu, J. P.

AU - Heinemann, B.

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Y1 - 2001/5

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