Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 328-330 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica B: Condensed Matter |
| Jahrgang | 272 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1999 |
| Extern publiziert | Ja |
| Veranstaltung | 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Dauer: 19 Juli 1999 → 23 Juli 1999 |
Abstract
We demonstrate a new concept to identify the population of 1s excitons in semiconductors in the time between optical excitation and recombination. The experiment determines the overlap of electrons and holes by tracing the electron-hole exchange energy. A dominant population of excitons is only present under stringent experimental conditions.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Physica B: Condensed Matter, Jahrgang 272, Nr. 1-4, 01.12.1999, S. 328-330.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - When do excitons really exist?
AU - Hägele, Daniel
AU - Hübner, Jens
AU - Rühle, W. W.
AU - Oestreich, Michael
PY - 1999/12/1
Y1 - 1999/12/1
N2 - We demonstrate a new concept to identify the population of 1s excitons in semiconductors in the time between optical excitation and recombination. The experiment determines the overlap of electrons and holes by tracing the electron-hole exchange energy. A dominant population of excitons is only present under stringent experimental conditions.
AB - We demonstrate a new concept to identify the population of 1s excitons in semiconductors in the time between optical excitation and recombination. The experiment determines the overlap of electrons and holes by tracing the electron-hole exchange energy. A dominant population of excitons is only present under stringent experimental conditions.
UR - http://www.scopus.com/inward/record.url?scp=0343244625&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)00384-1
DO - 10.1016/S0921-4526(99)00384-1
M3 - Conference article
AN - SCOPUS:0343244625
VL - 272
SP - 328
EP - 330
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
T2 - 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -