Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • Krista R. Khiangte
  • Jaswant S. Rathore
  • Jan Schmidt
  • Hans-Jörg Osten
  • A. Laha
  • S. Mahapatra

Organisationseinheiten

Externe Organisationen

  • Indian Institute of Technology Bombay (IITB)
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Details

OriginalspracheEnglisch
Aufsatznummer32LT01
FachzeitschriftJournal of Physics D: Applied Physics
Jahrgang51
Ausgabenummer32
PublikationsstatusVeröffentlicht - 19 Juli 2018

Abstract

In this letter, fabrication of all-epitaxial GeSn-on-insulator (GeSnOI) heterostructures is investigated, wherein both the GeSn epilayer and the Gd2O3 insulator are grown on Si(1 1 1) substrates by conventional molecular beam epitaxy. Analysis of the crystal and surface quality by high-resolution x-ray diffraction, cross-sectional transmission electron microscopy, and atomic force microscopy reveals the formation of a continuous and fully-relaxed single-crystalline GeSn epilayer (with a root-mean-square surface roughness of 3.5 nm), albeit GeSn epitaxy on Gd2O3 initiates in the Volmer-Weber growth mode. The defect structure of the GeSn epilayers is dominated by stacking faults and reflection microtwins, which are formed during the coalescence of the initially-formed islands. The concentration and mobility of holes, introduced by un-intentional p-type doping of the GeSn epilayers, were estimated to cm-3 and cm-2 V-1 s-1, respectively. In metal-semiconductor-metal Schottky diodes, fabricated with these GeSnOI heterostructures, the dark current was observed to be lower by a decade, when compared to similar diodes fabricated with GeSn/Ge/Si(0 0 1) heterostructures. The results presented here are thus promising for the development of these engineered substrates for (opto-)electronic applications.

ASJC Scopus Sachgebiete

Zitieren

Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy. / Khiangte, Krista R.; Rathore, Jaswant S.; Schmidt, Jan et al.
in: Journal of Physics D: Applied Physics, Jahrgang 51, Nr. 32, 32LT01, 19.07.2018.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Khiangte KR, Rathore JS, Schmidt J, Osten HJ, Laha A, Mahapatra S. Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy. Journal of Physics D: Applied Physics. 2018 Jul 19;51(32):32LT01. doi: 10.48550/arXiv.1802.03150, 10.1088/1361-6463/aad176
Khiangte, Krista R. ; Rathore, Jaswant S. ; Schmidt, Jan et al. / Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy. in: Journal of Physics D: Applied Physics. 2018 ; Jahrgang 51, Nr. 32.
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T1 - Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy

AU - Khiangte, Krista R.

AU - Rathore, Jaswant S.

AU - Schmidt, Jan

AU - Osten, Hans-Jörg

AU - Laha, A.

AU - Mahapatra, S.

N1 - © 2018 IOP Publishing Ltd

PY - 2018/7/19

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N2 - In this letter, fabrication of all-epitaxial GeSn-on-insulator (GeSnOI) heterostructures is investigated, wherein both the GeSn epilayer and the Gd2O3 insulator are grown on Si(1 1 1) substrates by conventional molecular beam epitaxy. Analysis of the crystal and surface quality by high-resolution x-ray diffraction, cross-sectional transmission electron microscopy, and atomic force microscopy reveals the formation of a continuous and fully-relaxed single-crystalline GeSn epilayer (with a root-mean-square surface roughness of 3.5 nm), albeit GeSn epitaxy on Gd2O3 initiates in the Volmer-Weber growth mode. The defect structure of the GeSn epilayers is dominated by stacking faults and reflection microtwins, which are formed during the coalescence of the initially-formed islands. The concentration and mobility of holes, introduced by un-intentional p-type doping of the GeSn epilayers, were estimated to cm-3 and cm-2 V-1 s-1, respectively. In metal-semiconductor-metal Schottky diodes, fabricated with these GeSnOI heterostructures, the dark current was observed to be lower by a decade, when compared to similar diodes fabricated with GeSn/Ge/Si(0 0 1) heterostructures. The results presented here are thus promising for the development of these engineered substrates for (opto-)electronic applications.

AB - In this letter, fabrication of all-epitaxial GeSn-on-insulator (GeSnOI) heterostructures is investigated, wherein both the GeSn epilayer and the Gd2O3 insulator are grown on Si(1 1 1) substrates by conventional molecular beam epitaxy. Analysis of the crystal and surface quality by high-resolution x-ray diffraction, cross-sectional transmission electron microscopy, and atomic force microscopy reveals the formation of a continuous and fully-relaxed single-crystalline GeSn epilayer (with a root-mean-square surface roughness of 3.5 nm), albeit GeSn epitaxy on Gd2O3 initiates in the Volmer-Weber growth mode. The defect structure of the GeSn epilayers is dominated by stacking faults and reflection microtwins, which are formed during the coalescence of the initially-formed islands. The concentration and mobility of holes, introduced by un-intentional p-type doping of the GeSn epilayers, were estimated to cm-3 and cm-2 V-1 s-1, respectively. In metal-semiconductor-metal Schottky diodes, fabricated with these GeSnOI heterostructures, the dark current was observed to be lower by a decade, when compared to similar diodes fabricated with GeSn/Ge/Si(0 0 1) heterostructures. The results presented here are thus promising for the development of these engineered substrates for (opto-)electronic applications.

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