TY - JOUR

T1 - Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics

AU - Zakharov, Alexei A.

AU - Vinogradov, Nikolay A.

AU - Aprojanz, Johannes

AU - Nguyen, Thi Thuy Nhung

AU - Tegenkamp, Christoph

AU - Struzzi, Claudia

AU - Iakimov, Tihomir

AU - Yakimova, Rositsa

AU - Jokubavicius, Valdas

N1 - Acknowledgments: Financial support by the Deutsche Forschungsgemeinschaft (Grants Te386/12-1 and Te 386/13-1) is gratefully acknowledged by J.A. and C.T. A.A.Z, C.S., and N.A.V. acknowledge Vetenskaps-rådet (TAILSPIN Project). R.Y. acknowledges financial support by the Swedish Agency for Strategic Research (SSF) via Projects GMT14-0077 and RMA15-0024.

PY - 2019/1/25

Y1 - 2019/1/25

N2 - One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect. That is why narrow graphene nanoribbons (GNRs) with width less than 50 nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNRs with excellent transport properties. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNRs are supposed to be used in advanced nanoelectronics, high quality thin (<50 nm) nanoribbons should be produced on a large (wafer) scale. Here we present a technique for scalable template growth of high quality GNRs on Si-face of SiC(0001) and provide detailed structural information along with transport properties. For the first time we succeeded now to avoid SiC-facet instabilities in order to grow high quality GNRs along both [11 00] and [112 0] crystallographic directions on the same substrate. The quality of the grown nanoribbons was confirmed by comprehensive characterization with atomic resolution STM, dark field LEEM, and transport measurements. This approach generates an entirely new platform for both fundamental and application driven research of quasi one-dimensional carbon based magnetism and spintronics.

AB - One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect. That is why narrow graphene nanoribbons (GNRs) with width less than 50 nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNRs with excellent transport properties. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNRs are supposed to be used in advanced nanoelectronics, high quality thin (<50 nm) nanoribbons should be produced on a large (wafer) scale. Here we present a technique for scalable template growth of high quality GNRs on Si-face of SiC(0001) and provide detailed structural information along with transport properties. For the first time we succeeded now to avoid SiC-facet instabilities in order to grow high quality GNRs along both [11 00] and [112 0] crystallographic directions on the same substrate. The quality of the grown nanoribbons was confirmed by comprehensive characterization with atomic resolution STM, dark field LEEM, and transport measurements. This approach generates an entirely new platform for both fundamental and application driven research of quasi one-dimensional carbon based magnetism and spintronics.

KW - 4-probe STM

KW - graphene nanoribbons (GNR)

KW - LEED

KW - LEEM

KW - SiC mesa structure

KW - STM

KW - transport properties

UR - http://www.scopus.com/inward/record.url?scp=85065646213&partnerID=8YFLogxK

U2 - 10.1021/acsanm.8b01780

DO - 10.1021/acsanm.8b01780

M3 - Article

AN - SCOPUS:85065646213

VL - 2

SP - 156

EP - 162

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 1

ER -