Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 670-673 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 12 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 2002 |
| Veranstaltung | 14th International Conference on the - Prague, Tschechische Republik Dauer: 30 Juli 2001 → 3 Aug. 2001 |
Abstract
We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|-γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 12, Nr. 1-4, 01.01.2002, S. 670-673.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Variable-range hopping in the quantum Hall regime
AU - Hohls, F.
AU - Zeitler, U.
AU - Haug, R. J.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|-γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
AB - We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|-γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
KW - Plateau transition
KW - Quantum Hall effect
KW - Scaling
KW - Variable-range hopping
UR - http://www.scopus.com/inward/record.url?scp=0035239529&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(01)00435-0
DO - 10.1016/S1386-9477(01)00435-0
M3 - Conference article
AN - SCOPUS:0035239529
VL - 12
SP - 670
EP - 673
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
T2 - 14th International Conference on the
Y2 - 30 July 2001 through 3 August 2001
ER -