Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 015 |
| Seiten (von - bis) | 209-212 |
| Seitenumfang | 4 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 10 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1995 |
| Extern publiziert | Ja |
Abstract
We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 10, Nr. 2, 015, 01.12.1995, S. 209-212.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Variable range hopping transport in the tails of the conductivity peaks between quantum Hall plateaus
AU - Koch, S.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
AB - We measure the electrical conductivity in the dissipative regime between adjacent integral quantum Hall plateaus. Variable-range-hopping transport is found, in accordance with a recent theory. The characteristic temperature for hopping conduction follows a power-law dependence on filling factor. Conductivity-peak broadening with increasing current is studied and a power-law dependence is observed.
UR - http://www.scopus.com/inward/record.url?scp=0029248708&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/10/2/015
DO - 10.1088/0268-1242/10/2/015
M3 - Article
AN - SCOPUS:0029248708
VL - 10
SP - 209
EP - 212
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 2
M1 - 015
ER -