Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • A. Ulhaq
  • Q. Duan
  • E. Zallo
  • F. Ding
  • O. G. Schmidt
  • A. I. Tartakovskii
  • M. S. Skolnick
  • E. A. Chekhovich

Externe Organisationen

  • The University of Sheffield
  • Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (IFW) e.V.
  • Paul-Drude-Institut für Festkörperelektronik (PDI)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer165306
FachzeitschriftPhysical Review B
Jahrgang93
Ausgabenummer16
PublikationsstatusVeröffentlicht - 14 Apr. 2016
Extern publiziertJa

ASJC Scopus Sachgebiete

Zitieren

Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots. / Ulhaq, A.; Duan, Q.; Zallo, E. et al.
in: Physical Review B, Jahrgang 93, Nr. 16, 165306, 14.04.2016.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Ulhaq, A., Duan, Q., Zallo, E., Ding, F., Schmidt, O. G., Tartakovskii, A. I., Skolnick, M. S., & Chekhovich, E. A. (2016). Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots. Physical Review B, 93(16), Artikel 165306. https://doi.org/10.1103/PhysRevB.93.165306
Ulhaq A, Duan Q, Zallo E, Ding F, Schmidt OG, Tartakovskii AI et al. Vanishing electron g factor and long-lived nuclear spin polarization in weakly strained nanohole-filled GaAs/AlGaAs quantum dots. Physical Review B. 2016 Apr 14;93(16):165306. doi: 10.1103/PhysRevB.93.165306
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AU - Schmidt, O. G.

AU - Tartakovskii, A. I.

AU - Skolnick, M. S.

AU - Chekhovich, E. A.

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