Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 44-46 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 60 |
| Ausgabenummer | 1 |
| Frühes Online-Datum | 6 Jan. 1992 |
| Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 6 Jan. 1992 |
| Extern publiziert | Ja |
Abstract
We attempt to grow 20-nm-thick layers of Sb and Ge as well as periods of (20 nm Sb/20 nm Ge) layers on muscovite (a special form of mica) by van der Waals epitaxy under different growth conditions. The growth process was in situ investigated by reflection high-energy electron diffraction and Auger electron spectroscopy. Epitaxial Sb layers could be obtained even at cold substrates (mica or polycrystalline Ge layers). It was not possible to grow monocrystalline Ge layers by van der Waals epitaxy. Only a formation of oriented Ge grains could be observed at higher temperatures.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 60, Nr. 1, 06.01.1992, S. 44-46.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica
AU - Osten, H. J.
AU - Klatt, J.
AU - Lippert, G.
PY - 1992/1/6
Y1 - 1992/1/6
N2 - We attempt to grow 20-nm-thick layers of Sb and Ge as well as periods of (20 nm Sb/20 nm Ge) layers on muscovite (a special form of mica) by van der Waals epitaxy under different growth conditions. The growth process was in situ investigated by reflection high-energy electron diffraction and Auger electron spectroscopy. Epitaxial Sb layers could be obtained even at cold substrates (mica or polycrystalline Ge layers). It was not possible to grow monocrystalline Ge layers by van der Waals epitaxy. Only a formation of oriented Ge grains could be observed at higher temperatures.
AB - We attempt to grow 20-nm-thick layers of Sb and Ge as well as periods of (20 nm Sb/20 nm Ge) layers on muscovite (a special form of mica) by van der Waals epitaxy under different growth conditions. The growth process was in situ investigated by reflection high-energy electron diffraction and Auger electron spectroscopy. Epitaxial Sb layers could be obtained even at cold substrates (mica or polycrystalline Ge layers). It was not possible to grow monocrystalline Ge layers by van der Waals epitaxy. Only a formation of oriented Ge grains could be observed at higher temperatures.
UR - http://www.scopus.com/inward/record.url?scp=5844327554&partnerID=8YFLogxK
U2 - 10.1063/1.107367
DO - 10.1063/1.107367
M3 - Article
AN - SCOPUS:5844327554
VL - 60
SP - 44
EP - 46
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 1
ER -