Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6329921 |
| Seiten (von - bis) | 381-386 |
| Seitenumfang | 6 |
| Fachzeitschrift | IEEE journal of photovoltaics |
| Jahrgang | 3 |
| Ausgabenummer | 1 |
| Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 12 Okt. 2012 |
Abstract
We investigate the validity of calibrated photoluminescence lifetime measurements of crystalline silicon wafers for arbitrary lifetime and injection ranges. Absolute lifetime images are obtained from steady-state photoluminescence measurements by relating the photoluminescence signal to the excess carrier density. Since the luminescence signal is expected to be related to the integral of the depth distribution of the excess carrier density, an adequate calibration of the luminescence signal requires a secondary method which yields the integral of the depth distribution of the excess carrier density in absolute units. In this paper, we investigate the applicability of steady-state photoconductance measurements for the calibration of the photoluminescence signal. We derive a generalized relation linking the photoluminescence signal with the excess carrier density, considering the impact of an inhomogeneous carrier concentration profile. We experimentally verify the impact of the carrier distribution on the photoluminescence calibration by investigating two silicon wafers with different electronic bulk properties. Finally, we propose an iterative correction procedure reducing the deviations due to an inhomogeneous carrier density profile of calibrated photoluminescence-based lifetime measurements significantly.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 3, Nr. 1, 6329921, 12.10.2012, S. 381-386.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Validity of calibrated photoluminescence lifetime measurements of crystalline silicon wafers for arbitrary lifetime and injection ranges
AU - Herlufsen, Sandra
AU - Hinken, David
AU - Offer, Matthias
AU - Schmidt, Jan
AU - Bothe, Karsten
PY - 2012/10/12
Y1 - 2012/10/12
N2 - We investigate the validity of calibrated photoluminescence lifetime measurements of crystalline silicon wafers for arbitrary lifetime and injection ranges. Absolute lifetime images are obtained from steady-state photoluminescence measurements by relating the photoluminescence signal to the excess carrier density. Since the luminescence signal is expected to be related to the integral of the depth distribution of the excess carrier density, an adequate calibration of the luminescence signal requires a secondary method which yields the integral of the depth distribution of the excess carrier density in absolute units. In this paper, we investigate the applicability of steady-state photoconductance measurements for the calibration of the photoluminescence signal. We derive a generalized relation linking the photoluminescence signal with the excess carrier density, considering the impact of an inhomogeneous carrier concentration profile. We experimentally verify the impact of the carrier distribution on the photoluminescence calibration by investigating two silicon wafers with different electronic bulk properties. Finally, we propose an iterative correction procedure reducing the deviations due to an inhomogeneous carrier density profile of calibrated photoluminescence-based lifetime measurements significantly.
AB - We investigate the validity of calibrated photoluminescence lifetime measurements of crystalline silicon wafers for arbitrary lifetime and injection ranges. Absolute lifetime images are obtained from steady-state photoluminescence measurements by relating the photoluminescence signal to the excess carrier density. Since the luminescence signal is expected to be related to the integral of the depth distribution of the excess carrier density, an adequate calibration of the luminescence signal requires a secondary method which yields the integral of the depth distribution of the excess carrier density in absolute units. In this paper, we investigate the applicability of steady-state photoconductance measurements for the calibration of the photoluminescence signal. We derive a generalized relation linking the photoluminescence signal with the excess carrier density, considering the impact of an inhomogeneous carrier concentration profile. We experimentally verify the impact of the carrier distribution on the photoluminescence calibration by investigating two silicon wafers with different electronic bulk properties. Finally, we propose an iterative correction procedure reducing the deviations due to an inhomogeneous carrier density profile of calibrated photoluminescence-based lifetime measurements significantly.
KW - Calibration
KW - carrier lifetime
KW - crystalline silicon wafers
KW - imaging
KW - photoconductance (PC)
KW - photoluminescence (PL)
UR - http://www.scopus.com/inward/record.url?scp=84871810682&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2012.2218794
DO - 10.1109/JPHOTOV.2012.2218794
M3 - Article
AN - SCOPUS:84871810682
VL - 3
SP - 381
EP - 386
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6329921
ER -