Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings 2023 IEEE 50th Photovoltaic Specialists Conference |
| Untertitel | PVSC |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9781665460590 |
| ISBN (Print) | 978-1-6654-6060-6 |
| Publikationsstatus | Veröffentlicht - 2023 |
| Veranstaltung | 50th IEEE Photovoltaic Specialists Conference, PVSC 2023 - San Juan, USA / Vereinigte Staaten Dauer: 11 Juni 2023 → 16 Juni 2023 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
Perovskite solar cells in pin structure are considered as advantageous for the implementation in perovskite silicon tandem solar cells. So far, one drawback of this approach is the requirement of buffer layers (e.g. SnOx) between the front TCO and the carbon-based ETLs (e.g. C60 or PCBM). In this work, we show that a sufficiently soft process for indium zinc oxide sputtering allows a damage-free contacting of the pin-structure directly on top of the ETL (C60) while simultaneously enabling a leaner processing scheme by abandoning the need for a (ALD) buffer layer. Ray tracing simulations indicate a gain of 0.44 mA/cm2 in photo generation in perovskite top cells by omitting the SnOx buffer layer. For the optimized IZO sputter process, we obtain implied open circuit voltages in absolute photoluminescence measurements at least as high as for reference samples without IZO. The sputter process works for both vapor and wet chemically deposited perovskite solar cells. Under the constrains of an oxygen-free sputter process, our soft process leads to a 60 nm thick IZO layer with a high mobility of µ= 42.7 ± 0.3 cm2/V s and low charge carrier density N= 3.6 ± 0.02 × 10^{20} 1/cm3.
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- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
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Proceedings 2023 IEEE 50th Photovoltaic Specialists Conference: PVSC. Institute of Electrical and Electronics Engineers Inc., 2023. (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Utilizing a soft IZO sputtering process to contact buffer-free semitransparent perovskite pin solar cells
AU - Clausing, Roland
AU - Raugewitz, Annika
AU - Grimm, Benjamin
AU - Diederich, Marvin
AU - Wietler, Tobias
AU - Haase, Felix
AU - Brendel, Rolf
AU - Peibst, Robby
PY - 2023
Y1 - 2023
N2 - Perovskite solar cells in pin structure are considered as advantageous for the implementation in perovskite silicon tandem solar cells. So far, one drawback of this approach is the requirement of buffer layers (e.g. SnOx) between the front TCO and the carbon-based ETLs (e.g. C60 or PCBM). In this work, we show that a sufficiently soft process for indium zinc oxide sputtering allows a damage-free contacting of the pin-structure directly on top of the ETL (C60) while simultaneously enabling a leaner processing scheme by abandoning the need for a (ALD) buffer layer. Ray tracing simulations indicate a gain of 0.44 mA/cm2 in photo generation in perovskite top cells by omitting the SnOx buffer layer. For the optimized IZO sputter process, we obtain implied open circuit voltages in absolute photoluminescence measurements at least as high as for reference samples without IZO. The sputter process works for both vapor and wet chemically deposited perovskite solar cells. Under the constrains of an oxygen-free sputter process, our soft process leads to a 60 nm thick IZO layer with a high mobility of µ= 42.7 ± 0.3 cm2/V s and low charge carrier density N= 3.6 ± 0.02 × 10^{20} 1/cm3.
AB - Perovskite solar cells in pin structure are considered as advantageous for the implementation in perovskite silicon tandem solar cells. So far, one drawback of this approach is the requirement of buffer layers (e.g. SnOx) between the front TCO and the carbon-based ETLs (e.g. C60 or PCBM). In this work, we show that a sufficiently soft process for indium zinc oxide sputtering allows a damage-free contacting of the pin-structure directly on top of the ETL (C60) while simultaneously enabling a leaner processing scheme by abandoning the need for a (ALD) buffer layer. Ray tracing simulations indicate a gain of 0.44 mA/cm2 in photo generation in perovskite top cells by omitting the SnOx buffer layer. For the optimized IZO sputter process, we obtain implied open circuit voltages in absolute photoluminescence measurements at least as high as for reference samples without IZO. The sputter process works for both vapor and wet chemically deposited perovskite solar cells. Under the constrains of an oxygen-free sputter process, our soft process leads to a 60 nm thick IZO layer with a high mobility of µ= 42.7 ± 0.3 cm2/V s and low charge carrier density N= 3.6 ± 0.02 × 10^{20} 1/cm3.
UR - http://www.scopus.com/inward/record.url?scp=85182757708&partnerID=8YFLogxK
U2 - 10.1109/PVSC48320.2023.10359968
DO - 10.1109/PVSC48320.2023.10359968
M3 - Conference contribution
AN - SCOPUS:85182757708
SN - 978-1-6654-6060-6
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - Proceedings 2023 IEEE 50th Photovoltaic Specialists Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 50th IEEE Photovoltaic Specialists Conference, PVSC 2023
Y2 - 11 June 2023 through 16 June 2023
ER -