Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 549-556 |
| Seitenumfang | 8 |
| Fachzeitschrift | Magnetohydrodynamics |
| Jahrgang | 45 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Veranstaltung | International Scientific Colloquium Modelling for Electromagnetic Processing - Hannover Dauer: 27 Okt. 2008 → 29 Okt. 2008 Konferenznummer: 5 |
Abstract
3D unsteady numerical calculations of velocity, temperature and dopant concentration fields in the molten zone in Floating Zone (FZ) Si single crystal growth process using a HF magnetic field are carried out. The recorded fluctuations of physical fields near the crystallization interface are used to estimate the possible fluctuations of the crystal growth rate. Analytical estimation of the amplitude of concentration oscillations due to changing local crystal growth rate is carried out.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Magnetohydrodynamics, Jahrgang 45, Nr. 4, 2009, S. 549-556.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth
AU - Lacis, K.
AU - Muižnieks, A.
AU - Jekabsons, N.
AU - Rudevičs, A.
AU - Nacke, B.
N1 - Conference code: 5
PY - 2009
Y1 - 2009
N2 - 3D unsteady numerical calculations of velocity, temperature and dopant concentration fields in the molten zone in Floating Zone (FZ) Si single crystal growth process using a HF magnetic field are carried out. The recorded fluctuations of physical fields near the crystallization interface are used to estimate the possible fluctuations of the crystal growth rate. Analytical estimation of the amplitude of concentration oscillations due to changing local crystal growth rate is carried out.
AB - 3D unsteady numerical calculations of velocity, temperature and dopant concentration fields in the molten zone in Floating Zone (FZ) Si single crystal growth process using a HF magnetic field are carried out. The recorded fluctuations of physical fields near the crystallization interface are used to estimate the possible fluctuations of the crystal growth rate. Analytical estimation of the amplitude of concentration oscillations due to changing local crystal growth rate is carried out.
UR - http://www.scopus.com/inward/record.url?scp=77950795518&partnerID=8YFLogxK
U2 - 10.22364/mhd.45.4.9
DO - 10.22364/mhd.45.4.9
M3 - Article
AN - SCOPUS:77950795518
VL - 45
SP - 549
EP - 556
JO - Magnetohydrodynamics
JF - Magnetohydrodynamics
SN - 0024-998X
IS - 4
T2 - International Scientific Colloquium Modelling for Electromagnetic Processing
Y2 - 27 October 2008 through 29 October 2008
ER -