Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 2204230 |
| Seitenumfang | 8 |
| Fachzeitschrift | Advanced functional materials |
| Jahrgang | 32 |
| Ausgabenummer | 34 |
| Frühes Online-Datum | 15 Juni 2022 |
| Publikationsstatus | Veröffentlicht - 19 Aug. 2022 |
Abstract
Metal phosphorous tri-chalcogenides are a category of new ternary 2D layered materials with a wide range of tuneable bandgaps (1.2–3.5 eV). These wide-bandgap semiconductors exhibit great potential applications in solar-blind ultraviolet (SBUV) photodetection. However, these 2D solar-blind photodetectors suffer from low photoresponsivity, slow photoresponse speed, and narrow operation spectral region, thereby limiting their practical applications. Here, an ultra-broadband photodetection based on a FePSe3/MoS2 heterostructure with coverage ranging from solar-blind ultraviolet 265 nm to longwave infrared (LWIR) 10.6 µm is reported. Notably, the device exhibits excellent weak light detection capability. A high photoresponsivity of 33 600 A W−1 and an external quantum efficiency of 1.57 × 107% are demonstrated. A noise-equivalent power as low as 5.7 × 10–16 W Hz−1/2 and a specific detectivity up to 1.51 × 1013 cm Hz1/2 W−1 are realized in the SBUV region. The room temperature LWIR photoresponsivity of 0.12 A W−1 is realized. This work opens a route to design high-performance SBUV photodetectors and wide spectral photoresponse applications.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Advanced functional materials, Jahrgang 32, Nr. 34, 2204230, 19.08.2022.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Ultrasensitive Solar-Blind Ultraviolet Photodetector Based on FePSe3/MoS2 Heterostructure Response to 10.6 µm
AU - Long, Mingsheng
AU - Shen, Zhen
AU - Wang, Ruijie
AU - Dong, Qingsong
AU - Liu, Zhiyi
AU - Hu, Xin
AU - Hou, Jie
AU - Lu, Yuan
AU - Wang, Fang
AU - Zhao, Dongxu
AU - Ding, Fei
AU - Tu, Yubing
AU - Han, Tao
AU - Li, Feng
AU - Zhang, Zongyuan
AU - Hou, Xingyuan
AU - Wang, Shaoliang
AU - Shan, Lei
N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grant Nos. 61975224 and 62004207, 12074002), University Synergy Innovation Program of Anhui Province (Grant No. GXXT-2020-050), Fund of Anhui Provincial Natural Science Foundation (Grant No. 2008085MF206), Recruitment Program for Leading Talent Team of Anhui Province 2020, State Key Laboratory of Luminescence and Applications (Grant No. SKLA-2021-03), and Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province (Grant No. IRKL2022KF03).
PY - 2022/8/19
Y1 - 2022/8/19
N2 - Metal phosphorous tri-chalcogenides are a category of new ternary 2D layered materials with a wide range of tuneable bandgaps (1.2–3.5 eV). These wide-bandgap semiconductors exhibit great potential applications in solar-blind ultraviolet (SBUV) photodetection. However, these 2D solar-blind photodetectors suffer from low photoresponsivity, slow photoresponse speed, and narrow operation spectral region, thereby limiting their practical applications. Here, an ultra-broadband photodetection based on a FePSe3/MoS2 heterostructure with coverage ranging from solar-blind ultraviolet 265 nm to longwave infrared (LWIR) 10.6 µm is reported. Notably, the device exhibits excellent weak light detection capability. A high photoresponsivity of 33 600 A W−1 and an external quantum efficiency of 1.57 × 107% are demonstrated. A noise-equivalent power as low as 5.7 × 10–16 W Hz−1/2 and a specific detectivity up to 1.51 × 1013 cm Hz1/2 W−1 are realized in the SBUV region. The room temperature LWIR photoresponsivity of 0.12 A W−1 is realized. This work opens a route to design high-performance SBUV photodetectors and wide spectral photoresponse applications.
AB - Metal phosphorous tri-chalcogenides are a category of new ternary 2D layered materials with a wide range of tuneable bandgaps (1.2–3.5 eV). These wide-bandgap semiconductors exhibit great potential applications in solar-blind ultraviolet (SBUV) photodetection. However, these 2D solar-blind photodetectors suffer from low photoresponsivity, slow photoresponse speed, and narrow operation spectral region, thereby limiting their practical applications. Here, an ultra-broadband photodetection based on a FePSe3/MoS2 heterostructure with coverage ranging from solar-blind ultraviolet 265 nm to longwave infrared (LWIR) 10.6 µm is reported. Notably, the device exhibits excellent weak light detection capability. A high photoresponsivity of 33 600 A W−1 and an external quantum efficiency of 1.57 × 107% are demonstrated. A noise-equivalent power as low as 5.7 × 10–16 W Hz−1/2 and a specific detectivity up to 1.51 × 1013 cm Hz1/2 W−1 are realized in the SBUV region. The room temperature LWIR photoresponsivity of 0.12 A W−1 is realized. This work opens a route to design high-performance SBUV photodetectors and wide spectral photoresponse applications.
KW - 2D materials
KW - FePSe
KW - heterojunctions
KW - photodetectors
KW - solar-blind ultraviolet
UR - http://www.scopus.com/inward/record.url?scp=85131789321&partnerID=8YFLogxK
U2 - 10.1002/adfm.202204230
DO - 10.1002/adfm.202204230
M3 - Article
AN - SCOPUS:85131789321
VL - 32
JO - Advanced functional materials
JF - Advanced functional materials
SN - 1616-301X
IS - 34
M1 - 2204230
ER -