Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | H937-H940 |
| Fachzeitschrift | Journal of the Electrochemical Society |
| Jahrgang | 158 |
| Ausgabenummer | 9 |
| Publikationsstatus | Veröffentlicht - 20 Juli 2011 |
| Extern publiziert | Ja |
Abstract
An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Chemie (insg.)
- Elektrochemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of the Electrochemical Society, Jahrgang 158, Nr. 9, 20.07.2011, S. H937-H940.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Ultrafast atomic layer deposition of alumina layers for solar cell passivation
AU - Poodt, P.
AU - Tiba, V.
AU - Werner, F.
AU - Schmidt, J.
AU - Vermeer, A.
AU - Roozeboom, F.
PY - 2011/7/20
Y1 - 2011/7/20
N2 - An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h.
AB - An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h.
UR - http://www.scopus.com/inward/record.url?scp=79960902374&partnerID=8YFLogxK
U2 - 10.1149/1.3610994
DO - 10.1149/1.3610994
M3 - Article
AN - SCOPUS:79960902374
VL - 158
SP - H937-H940
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 9
ER -