Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Physics of Semiconductors |
| Untertitel | Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Seiten | 213-214 |
| Seitenumfang | 2 |
| Publikationsstatus | Veröffentlicht - 31 Dez. 2013 |
| Veranstaltung | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Schweiz Dauer: 29 Juli 2012 → 3 Aug. 2012 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
We present transport measurements on a lateral triple quantum dot with a star-like geometry and one lead attached to each dot. [1] The system is studied in a regime close to established quadruple points, where all three dots are in resonance. The specific sample structure allows us to apply two different bias voltages to the two source leads and thus to study the influence between the paths with serial double dots.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. S. 213-214 (AIP Conference Proceedings; Band 1566).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Two-path transport measurements with bias dependence on a triple quantum dot
AU - Kotzian, M.
AU - Rogge, M. C.
AU - Haug, R. J.
PY - 2013/12/31
Y1 - 2013/12/31
N2 - We present transport measurements on a lateral triple quantum dot with a star-like geometry and one lead attached to each dot. [1] The system is studied in a regime close to established quadruple points, where all three dots are in resonance. The specific sample structure allows us to apply two different bias voltages to the two source leads and thus to study the influence between the paths with serial double dots.
AB - We present transport measurements on a lateral triple quantum dot with a star-like geometry and one lead attached to each dot. [1] The system is studied in a regime close to established quadruple points, where all three dots are in resonance. The specific sample structure allows us to apply two different bias voltages to the two source leads and thus to study the influence between the paths with serial double dots.
KW - Coulomb blockade
KW - electronic transport
KW - triple quantum dots
UR - http://www.scopus.com/inward/record.url?scp=84907351647&partnerID=8YFLogxK
U2 - 10.1063/1.4848361
DO - 10.1063/1.4848361
M3 - Conference contribution
AN - SCOPUS:84907351647
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 213
EP - 214
BT - Physics of Semiconductors
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -