Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • J. Klatt
  • G. Lippert
  • E. Bugiel
  • S. Hinrich

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2522-2524
Seitenumfang3
FachzeitschriftApplied physics letters
Jahrgang60
Ausgabenummer20
Frühes Online-Datum18 Mai 1992
PublikationsstatusElektronisch veröffentlicht (E-Pub) - 18 Mai 1992
Extern publiziertJa

Abstract

Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

ASJC Scopus Sachgebiete

Zitieren

Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. / Osten, H. J.; Klatt, J.; Lippert, G. et al.
in: Applied physics letters, Jahrgang 60, Nr. 20, 18.05.1992, S. 2522-2524.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten, H. J., Klatt, J., Lippert, G., Bugiel, E., & Hinrich, S. (1992). Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. Applied physics letters, 60(20), 2522-2524. Vorabveröffentlichung online. https://doi.org/10.1063/1.106926
Osten HJ, Klatt J, Lippert G, Bugiel E, Hinrich S. Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. Applied physics letters. 1992 Mai 18;60(20):2522-2524. Epub 1992 Mai 18. doi: 10.1063/1.106926
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@article{7777d80e7ec64327a2cccf19049854bc,
title = "Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant",
abstract = "Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.",
author = "Osten, {H. J.} and J. Klatt and G. Lippert and E. Bugiel and S. Hinrich",
year = "1992",
month = may,
day = "18",
doi = "10.1063/1.106926",
language = "English",
volume = "60",
pages = "2522--2524",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "20",

}

Download

TY - JOUR

T1 - Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

AU - Osten, H. J.

AU - Klatt, J.

AU - Lippert, G.

AU - Bugiel, E.

AU - Hinrich, S.

PY - 1992/5/18

Y1 - 1992/5/18

N2 - Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

AB - Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

UR - http://www.scopus.com/inward/record.url?scp=0006474250&partnerID=8YFLogxK

U2 - 10.1063/1.106926

DO - 10.1063/1.106926

M3 - Article

AN - SCOPUS:0006474250

VL - 60

SP - 2522

EP - 2524

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 20

ER -