Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • H. J. Osten
  • J. Klatt
  • G. Lippert
  • E. Bugiel
  • S. Hinrich

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)2522-2524
Seitenumfang3
FachzeitschriftApplied physics letters
Jahrgang60
Ausgabenummer20
PublikationsstatusVeröffentlicht - 18 Mai 1992
Extern publiziertJa

Abstract

Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

ASJC Scopus Sachgebiete

Zitieren

Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. / Osten, H. J.; Klatt, J.; Lippert, G. et al.
in: Applied physics letters, Jahrgang 60, Nr. 20, 18.05.1992, S. 2522-2524.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten HJ, Klatt J, Lippert G, Bugiel E, Hinrich S. Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant. Applied physics letters. 1992 Mai 18;60(20):2522-2524. doi: 10.1063/1.106926
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