Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 2522-2524 |
Seitenumfang | 3 |
Fachzeitschrift | Applied physics letters |
Jahrgang | 60 |
Ausgabenummer | 20 |
Frühes Online-Datum | 18 Mai 1992 |
Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 18 Mai 1992 |
Extern publiziert | Ja |
Abstract
Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Applied physics letters, Jahrgang 60, Nr. 20, 18.05.1992, S. 2522-2524.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant
AU - Osten, H. J.
AU - Klatt, J.
AU - Lippert, G.
AU - Bugiel, E.
AU - Hinrich, S.
PY - 1992/5/18
Y1 - 1992/5/18
N2 - Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.
AB - Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.
UR - http://www.scopus.com/inward/record.url?scp=0006474250&partnerID=8YFLogxK
U2 - 10.1063/1.106926
DO - 10.1063/1.106926
M3 - Article
AN - SCOPUS:0006474250
VL - 60
SP - 2522
EP - 2524
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 20
ER -