Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 033313 |
| Fachzeitschrift | Physical Review B - Condensed Matter and Materials Physics |
| Jahrgang | 73 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 27 Feb. 2006 |
Abstract
Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the I-V characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-lifetime broadening of the quantum dot states and a quantitative comparison of the experimental data with a nonequilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 73, Nr. 3, 033313, 27.02.2006.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Tunneling resonances in quantum dots
T2 - Coulomb interaction modifies the width
AU - Könemann, Jens
AU - Kubala, Björn
AU - König, Jürgen
AU - Haug, Rolf J.
PY - 2006/2/27
Y1 - 2006/2/27
N2 - Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the I-V characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-lifetime broadening of the quantum dot states and a quantitative comparison of the experimental data with a nonequilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction.
AB - Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the I-V characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-lifetime broadening of the quantum dot states and a quantitative comparison of the experimental data with a nonequilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction.
UR - http://www.scopus.com/inward/record.url?scp=33144461502&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.73.033313
DO - 10.1103/PhysRevB.73.033313
M3 - Article
AN - SCOPUS:33144461502
VL - 73
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 3
M1 - 033313
ER -