Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 420-422 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica B: Physics of Condensed Matter |
| Jahrgang | 211 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 1 Mai 1995 |
| Extern publiziert | Ja |
Abstract
We have developed a new method to study the non equilibrium between edge channels and the bulk of a two-dimensional electron gas. The variation of the effective resistance with applied DC bias clearly shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips. An additional DC bias changes both the width of the strip and the path for tunneling resulting in a diode-like characteristic.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Physica B: Physics of Condensed Matter, Jahrgang 211, Nr. 1-4, 01.05.1995, S. 420-422.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Tunneling across incompressible strip at the edge
AU - Zhitenev, N. B.
AU - Haug, R. J.
AU - Klitzing, K. v.
AU - Eberl, K.
PY - 1995/5/1
Y1 - 1995/5/1
N2 - We have developed a new method to study the non equilibrium between edge channels and the bulk of a two-dimensional electron gas. The variation of the effective resistance with applied DC bias clearly shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips. An additional DC bias changes both the width of the strip and the path for tunneling resulting in a diode-like characteristic.
AB - We have developed a new method to study the non equilibrium between edge channels and the bulk of a two-dimensional electron gas. The variation of the effective resistance with applied DC bias clearly shows that the coupling between the edge channels and the bulk is due to tunneling across the incompressible strips. An additional DC bias changes both the width of the strip and the path for tunneling resulting in a diode-like characteristic.
UR - http://www.scopus.com/inward/record.url?scp=58149324596&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(94)01083-D
DO - 10.1016/0921-4526(94)01083-D
M3 - Article
AN - SCOPUS:58149324596
VL - 211
SP - 420
EP - 422
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 1-4
ER -