Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • I. Hapke-Wurst
  • U. Zeitler
  • U. F. Keyser
  • R. J. Haug
  • K. Pierz
  • Z. Ma

Organisationseinheiten

Externe Organisationen

  • Physikalisch-Technische Bundesanstalt (PTB)
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Details

OriginalspracheEnglisch
Seiten (von - bis)1209-1211
Seitenumfang3
FachzeitschriftApplied Physics Letters
Jahrgang82
Ausgabenummer8
PublikationsstatusVeröffentlicht - Jan. 2003

Abstract

A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with increasing InAs coverage. The results were confirmed by atomic force micrographs and photoluminescence experiments on reference samples.

ASJC Scopus Sachgebiete

Zitieren

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters. / Hapke-Wurst, I.; Zeitler, U.; Keyser, U. F. et al.
in: Applied Physics Letters, Jahrgang 82, Nr. 8, 01.2003, S. 1209-1211.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Hapke-Wurst I, Zeitler U, Keyser UF, Haug RJ, Pierz K, Ma Z. Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters. Applied Physics Letters. 2003 Jan;82(8):1209-1211. doi: 10.1063/1.1555712, 10.15488/2830
Hapke-Wurst, I. ; Zeitler, U. ; Keyser, U. F. et al. / Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters. in: Applied Physics Letters. 2003 ; Jahrgang 82, Nr. 8. S. 1209-1211.
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