Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • F. Ding
  • R. Singh
  • J. D. Plumhof
  • T. Zander
  • V. Křápek
  • Y. H. Chen
  • M. Benyoucef
  • V. Zwiller
  • K. Dörr
  • G. Bester
  • A. Rastelli
  • O. G. Schmidt

Externe Organisationen

  • Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (IFW) e.V.
  • CAS - Institute of Semiconductors
  • Max-Planck-Institut für Festkörperforschung
  • Delft University of Technology
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Details

OriginalspracheEnglisch
Aufsatznummer067405
FachzeitschriftPhysical Review Letters
Jahrgang104
Ausgabenummer6
PublikationsstatusVeröffentlicht - 12 Feb. 2010
Extern publiziertJa

ASJC Scopus Sachgebiete

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Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress. / Ding, F.; Singh, R.; Plumhof, J. D. et al.
in: Physical Review Letters, Jahrgang 104, Nr. 6, 067405, 12.02.2010.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Ding, F, Singh, R, Plumhof, JD, Zander, T, Křápek, V, Chen, YH, Benyoucef, M, Zwiller, V, Dörr, K, Bester, G, Rastelli, A & Schmidt, OG 2010, 'Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress', Physical Review Letters, Jg. 104, Nr. 6, 067405. https://doi.org/10.1103/PhysRevLett.104.067405
Ding, F., Singh, R., Plumhof, J. D., Zander, T., Křápek, V., Chen, Y. H., Benyoucef, M., Zwiller, V., Dörr, K., Bester, G., Rastelli, A., & Schmidt, O. G. (2010). Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress. Physical Review Letters, 104(6), Artikel 067405. https://doi.org/10.1103/PhysRevLett.104.067405
Ding F, Singh R, Plumhof JD, Zander T, Křápek V, Chen YH et al. Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress. Physical Review Letters. 2010 Feb 12;104(6):067405. doi: 10.1103/PhysRevLett.104.067405
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