Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 172108 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 93 |
| Ausgabenummer | 17 |
| Publikationsstatus | Veröffentlicht - 6 Nov. 2008 |
Abstract
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 93, Nr. 17, 172108, 06.11.2008.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Tunable graphene system with two decoupled monolayers
AU - Schmidt, H.
AU - Lüdtke, T.
AU - Barthold, P.
AU - McCann, E.
AU - Fal'Ko, V. I.
AU - Haug, R. J.
N1 - Funding information: The authors acknowledge financial support by the excellence cluster QUEST within the German Excellence Initiative. V.I.F. thanks the A. von Humboldt Foundation for hospitality. This work was supported by ESF CRP “SpiCo”, EPSRC-Lancaster Portfolio Partnership Grant No. EP/C511743 and EPSRC First Grant No. EP/E063519/1.
PY - 2008/11/6
Y1 - 2008/11/6
N2 - The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.
AB - The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FETs) gives access to special types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them.
UR - http://www.scopus.com/inward/record.url?scp=55149104637&partnerID=8YFLogxK
U2 - 10.1063/1.3012369
DO - 10.1063/1.3012369
M3 - Article
AN - SCOPUS:55149104637
VL - 93
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 17
M1 - 172108
ER -