Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 24471-24479 |
| Seitenumfang | 9 |
| Fachzeitschrift | Physical Chemistry Chemical Physics |
| Jahrgang | 22 |
| Ausgabenummer | 42 |
| Frühes Online-Datum | 5 Okt. 2020 |
| Publikationsstatus | Veröffentlicht - 14 Nov. 2020 |
Abstract
Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt2HgSe3. Our results show that the dynamically stable monolayer Pt2HgSe3 is a topological insulator with a band gap of 160 meV. In addition, the effect of layer thickness, strain and electric field on the electronic properties are systematically investigated using fully relativistic calculations. We find that the electronic properties are sensitive to the applied electric field. With increasing electric field strength up to 0.5 V Å-1, the band gap decreases from 160 to 10 meV at 0.5 V Å-1. Interestingly, upon further increasing the electric field up to 1.0 V Å-1, the band gap opens again and reaches its bare value (160 meV) at 1.0 V Å-1, which indicates that the band gap is reversibly controllable via the applied external electric field. Moreover, the electronic properties are also examined under uniaxial and biaxial strain. Our results reveal that the band gap value can be tuned to 150 meV (at 1%) and to 92 meV (at 6%) under uniaxial strain, while under biaxial tensile strain, it increases to 170 meV at 5% and fluctuates between 150 and 100 meV in the range of 5-10%. In contrast, the biaxial-compressive strain is found to drive the semiconducting-to-metallic transition for sufficiently large compressions (over 8%). On the other hand, we find that increasing the thickness of Pt2HgSe3 modifies the band gap to 150 meV (for the bilayer) and 140 meV (for the trilayer). In the bilayer Pt2HgSe3 structure, we further investigated the effect of out-of-plane pressure, both compressive and tensile, and our results show that the electronic structure of bilayer Pt2HgSe3 is largely preserved. Our study provides new insight into the modification of the electronic structure of monolayer Pt2HgSe3 upon application of external fields and variation in the layer thickness.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Chemie (insg.)
- Physikalische und Theoretische Chemie
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in: Physical Chemistry Chemical Physics, Jahrgang 22, Nr. 42, 14.11.2020, S. 24471-24479.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3(Jacutingaite)
AU - Bafekry, Asadollah
AU - Stampfl, Catherine
AU - Nguyen, Chuong
AU - Ghergherehchi, Mitra
AU - Mortazavi, Bohayra
N1 - Funding information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) (NRF-2017R1A2B2011989).
PY - 2020/11/14
Y1 - 2020/11/14
N2 - Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt2HgSe3. Our results show that the dynamically stable monolayer Pt2HgSe3 is a topological insulator with a band gap of 160 meV. In addition, the effect of layer thickness, strain and electric field on the electronic properties are systematically investigated using fully relativistic calculations. We find that the electronic properties are sensitive to the applied electric field. With increasing electric field strength up to 0.5 V Å-1, the band gap decreases from 160 to 10 meV at 0.5 V Å-1. Interestingly, upon further increasing the electric field up to 1.0 V Å-1, the band gap opens again and reaches its bare value (160 meV) at 1.0 V Å-1, which indicates that the band gap is reversibly controllable via the applied external electric field. Moreover, the electronic properties are also examined under uniaxial and biaxial strain. Our results reveal that the band gap value can be tuned to 150 meV (at 1%) and to 92 meV (at 6%) under uniaxial strain, while under biaxial tensile strain, it increases to 170 meV at 5% and fluctuates between 150 and 100 meV in the range of 5-10%. In contrast, the biaxial-compressive strain is found to drive the semiconducting-to-metallic transition for sufficiently large compressions (over 8%). On the other hand, we find that increasing the thickness of Pt2HgSe3 modifies the band gap to 150 meV (for the bilayer) and 140 meV (for the trilayer). In the bilayer Pt2HgSe3 structure, we further investigated the effect of out-of-plane pressure, both compressive and tensile, and our results show that the electronic structure of bilayer Pt2HgSe3 is largely preserved. Our study provides new insight into the modification of the electronic structure of monolayer Pt2HgSe3 upon application of external fields and variation in the layer thickness.
AB - Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt2HgSe3. Our results show that the dynamically stable monolayer Pt2HgSe3 is a topological insulator with a band gap of 160 meV. In addition, the effect of layer thickness, strain and electric field on the electronic properties are systematically investigated using fully relativistic calculations. We find that the electronic properties are sensitive to the applied electric field. With increasing electric field strength up to 0.5 V Å-1, the band gap decreases from 160 to 10 meV at 0.5 V Å-1. Interestingly, upon further increasing the electric field up to 1.0 V Å-1, the band gap opens again and reaches its bare value (160 meV) at 1.0 V Å-1, which indicates that the band gap is reversibly controllable via the applied external electric field. Moreover, the electronic properties are also examined under uniaxial and biaxial strain. Our results reveal that the band gap value can be tuned to 150 meV (at 1%) and to 92 meV (at 6%) under uniaxial strain, while under biaxial tensile strain, it increases to 170 meV at 5% and fluctuates between 150 and 100 meV in the range of 5-10%. In contrast, the biaxial-compressive strain is found to drive the semiconducting-to-metallic transition for sufficiently large compressions (over 8%). On the other hand, we find that increasing the thickness of Pt2HgSe3 modifies the band gap to 150 meV (for the bilayer) and 140 meV (for the trilayer). In the bilayer Pt2HgSe3 structure, we further investigated the effect of out-of-plane pressure, both compressive and tensile, and our results show that the electronic structure of bilayer Pt2HgSe3 is largely preserved. Our study provides new insight into the modification of the electronic structure of monolayer Pt2HgSe3 upon application of external fields and variation in the layer thickness.
UR - http://www.scopus.com/inward/record.url?scp=85095800103&partnerID=8YFLogxK
U2 - 10.1039/d0cp04388e
DO - 10.1039/d0cp04388e
M3 - Article
C2 - 33089277
AN - SCOPUS:85095800103
VL - 22
SP - 24471
EP - 24479
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
SN - 1463-9076
IS - 42
ER -