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Trapping-related recombination of charge carriers in silicon

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • N. P. Harder
  • R. Gogolin
  • R. Brendel

Organisationseinheiten

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)

Details

OriginalspracheEnglisch
Aufsatznummer112111
FachzeitschriftApplied physics letters
Jahrgang97
Ausgabenummer11
PublikationsstatusVeröffentlicht - 13 Sept. 2010

Abstract

We present experimental evidence and theoretical explanation for simultaneous occurrence of trapping related increased apparent carrier lifetime and decreased actual recombination lifetime in low injection. This correlation is not describable by the common Hornbeck and Haynes [Phys. Rev. 97, 311 (1955)] trapping model. McIntosh, Paudyal, and Macdonald [J. Appl. Phys. 104, 084503 (2008)] recently used Shockley-Read-Hall (SRH) recombination statistics [Phys. Rev. 87, 835 (1952)] for describing the temperature dependence of trapping. Our study shows that these SRH statistics for traps also explain a causal connection between trapping-related increased apparent charge carrier lifetime and reduced actual lifetime in low injection.

ASJC Scopus Sachgebiete

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Trapping-related recombination of charge carriers in silicon. / Harder, N. P.; Gogolin, R.; Brendel, R.
in: Applied physics letters, Jahrgang 97, Nr. 11, 112111, 13.09.2010.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Harder, N. P., Gogolin, R., & Brendel, R. (2010). Trapping-related recombination of charge carriers in silicon. Applied physics letters, 97(11), Artikel 112111. https://doi.org/10.1063/1.3490240
Harder NP, Gogolin R, Brendel R. Trapping-related recombination of charge carriers in silicon. Applied physics letters. 2010 Sep 13;97(11):112111. doi: 10.1063/1.3490240
Harder, N. P. ; Gogolin, R. ; Brendel, R. / Trapping-related recombination of charge carriers in silicon. in: Applied physics letters. 2010 ; Jahrgang 97, Nr. 11.
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@article{5788f32706c34e0398e5ffd767884ce0,
title = "Trapping-related recombination of charge carriers in silicon",
abstract = "We present experimental evidence and theoretical explanation for simultaneous occurrence of trapping related increased apparent carrier lifetime and decreased actual recombination lifetime in low injection. This correlation is not describable by the common Hornbeck and Haynes [Phys. Rev. 97, 311 (1955)] trapping model. McIntosh, Paudyal, and Macdonald [J. Appl. Phys. 104, 084503 (2008)] recently used Shockley-Read-Hall (SRH) recombination statistics [Phys. Rev. 87, 835 (1952)] for describing the temperature dependence of trapping. Our study shows that these SRH statistics for traps also explain a causal connection between trapping-related increased apparent charge carrier lifetime and reduced actual lifetime in low injection.",
author = "Harder, {N. P.} and R. Gogolin and R. Brendel",
year = "2010",
month = sep,
day = "13",
doi = "10.1063/1.3490240",
language = "English",
volume = "97",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "11",

}

Download

TY - JOUR

T1 - Trapping-related recombination of charge carriers in silicon

AU - Harder, N. P.

AU - Gogolin, R.

AU - Brendel, R.

PY - 2010/9/13

Y1 - 2010/9/13

N2 - We present experimental evidence and theoretical explanation for simultaneous occurrence of trapping related increased apparent carrier lifetime and decreased actual recombination lifetime in low injection. This correlation is not describable by the common Hornbeck and Haynes [Phys. Rev. 97, 311 (1955)] trapping model. McIntosh, Paudyal, and Macdonald [J. Appl. Phys. 104, 084503 (2008)] recently used Shockley-Read-Hall (SRH) recombination statistics [Phys. Rev. 87, 835 (1952)] for describing the temperature dependence of trapping. Our study shows that these SRH statistics for traps also explain a causal connection between trapping-related increased apparent charge carrier lifetime and reduced actual lifetime in low injection.

AB - We present experimental evidence and theoretical explanation for simultaneous occurrence of trapping related increased apparent carrier lifetime and decreased actual recombination lifetime in low injection. This correlation is not describable by the common Hornbeck and Haynes [Phys. Rev. 97, 311 (1955)] trapping model. McIntosh, Paudyal, and Macdonald [J. Appl. Phys. 104, 084503 (2008)] recently used Shockley-Read-Hall (SRH) recombination statistics [Phys. Rev. 87, 835 (1952)] for describing the temperature dependence of trapping. Our study shows that these SRH statistics for traps also explain a causal connection between trapping-related increased apparent charge carrier lifetime and reduced actual lifetime in low injection.

UR - http://www.scopus.com/inward/record.url?scp=77956815454&partnerID=8YFLogxK

U2 - 10.1063/1.3490240

DO - 10.1063/1.3490240

M3 - Article

AN - SCOPUS:77956815454

VL - 97

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 11

M1 - 112111

ER -