Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010 |
| Untertitel | Conference Proceedings |
| Seiten | 443-446 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2010 |
| Veranstaltung | 35th IEEE Photovoltaic Specialists Conference: PVSC 2010 - Honolulu, HI, USA / Vereinigte Staaten Dauer: 20 Juni 2010 → 25 Juni 2010 Konferenznummer: 35 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
In this paper we show experimental results that indicate that trapping-related increase of the apparent carrier lifetime can be directly accompanied by a decreased recombination lifetime. This effect cannot be described with the traditionally used trapping model of Hornbeck and Haynes [1,2,3] (H&H). In order to obtain a physically consistent theoretical description of the observed correlation between trapping and recombination we use the Shockley, Read [4] and Hall [5] (SRH) formalism. We assume trap states with non-zero capture cross sections for majority carriers, which may nevertheless be several orders of magnitude smaller than the minority carrier capture cross sections. In this way we define a Recombination-Active Trap state (RAT) that allows a simultaneous description of trapping effects and a reduction of the recombination lifetime in low level injection.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. 2010. S. 443-446 5616743 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Trapping-related recombination of charge carriers in silicon
AU - Gogolin, R.
AU - Harder, N. P.
AU - Brendel, R.
N1 - Conference code: 35
PY - 2010
Y1 - 2010
N2 - In this paper we show experimental results that indicate that trapping-related increase of the apparent carrier lifetime can be directly accompanied by a decreased recombination lifetime. This effect cannot be described with the traditionally used trapping model of Hornbeck and Haynes [1,2,3] (H&H). In order to obtain a physically consistent theoretical description of the observed correlation between trapping and recombination we use the Shockley, Read [4] and Hall [5] (SRH) formalism. We assume trap states with non-zero capture cross sections for majority carriers, which may nevertheless be several orders of magnitude smaller than the minority carrier capture cross sections. In this way we define a Recombination-Active Trap state (RAT) that allows a simultaneous description of trapping effects and a reduction of the recombination lifetime in low level injection.
AB - In this paper we show experimental results that indicate that trapping-related increase of the apparent carrier lifetime can be directly accompanied by a decreased recombination lifetime. This effect cannot be described with the traditionally used trapping model of Hornbeck and Haynes [1,2,3] (H&H). In order to obtain a physically consistent theoretical description of the observed correlation between trapping and recombination we use the Shockley, Read [4] and Hall [5] (SRH) formalism. We assume trap states with non-zero capture cross sections for majority carriers, which may nevertheless be several orders of magnitude smaller than the minority carrier capture cross sections. In this way we define a Recombination-Active Trap state (RAT) that allows a simultaneous description of trapping effects and a reduction of the recombination lifetime in low level injection.
UR - http://www.scopus.com/inward/record.url?scp=78650147130&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616743
DO - 10.1109/PVSC.2010.5616743
M3 - Conference contribution
AN - SCOPUS:78650147130
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 443
EP - 446
BT - 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -