Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 073724 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 109 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 1 Apr. 2011 |
Abstract
The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 109, Nr. 7, 073724, 01.04.2011.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors
AU - Lipp, E.
AU - Shahar, Z.
AU - Bittel, B. C.
AU - Lenahan, P. M.
AU - Schwendt, D.
AU - Osten, H. J.
AU - Eizenberg, M.
N1 - Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. One of the authors (E.L.) acknowledges the support of an Israel Ministry of Science Eshkol grant. Dr. Ramadurai Ranjith (Leibniz University) is acknowledged for helpful discussions and input.
PY - 2011/4/1
Y1 - 2011/4/1
N2 - The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.
AB - The barrier height at the Pt/Gd2O3 interface is determined by current-voltage measurements. Current conduction is found to be governed by carrier injection from the electrode, with a barrier height of 0.6 0.1 eV. This value, which was verified by the method suggested by Zafar [Appl. Phys. Lett. 80, 4858 (2002)], is much smaller than the difference between the metal work function (5.6 eV) and the oxide electron affinity (1.95-2.05 eV). As Fermi-level pinning is not dominant at Pt/Gd2O3 interfaces, it is proposed that electrons are injected into a defect-related energy band in the oxide. The existence of such a defect, as well as its position in the oxide forbidden energy bandgap, agrees with results obtained by magnetic resonance measurements.
UR - http://www.scopus.com/inward/record.url?scp=79955394552&partnerID=8YFLogxK
U2 - 10.1063/1.3573036
DO - 10.1063/1.3573036
M3 - Article
AN - SCOPUS:79955394552
VL - 109
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
M1 - 073724
ER -