Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 006 |
| Seiten (von - bis) | 1890-1896 |
| Seitenumfang | 7 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 9 |
| Ausgabenummer | 11 S |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1994 |
| Extern publiziert | Ja |
Abstract
Lateral transport through a quantum dot defined by the split-gate technique in a two-dimensional electron gas is investigated as a function of backgate voltage and emitter-collector bias voltage. This measurement technique allows us to identify the regimes of single-electron tunnelling. Within these regimes, excited states of the electron system in the quantum dot provide additional transport channels which can be classified as being opened in resonance with the Fermi level of either the emitter or the collector. The method of transport spectroscopy is discussed. When performing spectroscopy in a magnetic field, one has to take into account that the magnetic field affects not only the electronic states of the quantum dot but also the electronic states in the electrodes surrounding the quantum dot.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 9, Nr. 11 S, 006, 01.12.1994, S. 1890-1896.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Transport spectroscopy on a single quantum dot
AU - Weis, J.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - Lateral transport through a quantum dot defined by the split-gate technique in a two-dimensional electron gas is investigated as a function of backgate voltage and emitter-collector bias voltage. This measurement technique allows us to identify the regimes of single-electron tunnelling. Within these regimes, excited states of the electron system in the quantum dot provide additional transport channels which can be classified as being opened in resonance with the Fermi level of either the emitter or the collector. The method of transport spectroscopy is discussed. When performing spectroscopy in a magnetic field, one has to take into account that the magnetic field affects not only the electronic states of the quantum dot but also the electronic states in the electrodes surrounding the quantum dot.
AB - Lateral transport through a quantum dot defined by the split-gate technique in a two-dimensional electron gas is investigated as a function of backgate voltage and emitter-collector bias voltage. This measurement technique allows us to identify the regimes of single-electron tunnelling. Within these regimes, excited states of the electron system in the quantum dot provide additional transport channels which can be classified as being opened in resonance with the Fermi level of either the emitter or the collector. The method of transport spectroscopy is discussed. When performing spectroscopy in a magnetic field, one has to take into account that the magnetic field affects not only the electronic states of the quantum dot but also the electronic states in the electrodes surrounding the quantum dot.
UR - http://www.scopus.com/inward/record.url?scp=0028548917&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/9/11S/006
DO - 10.1088/0268-1242/9/11S/006
M3 - Article
AN - SCOPUS:0028548917
VL - 9
SP - 1890
EP - 1896
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11 S
M1 - 006
ER -