Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 207-212 |
| Seitenumfang | 6 |
| Fachzeitschrift | Physica B: Physics of Condensed Matter |
| Jahrgang | 212 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 2 Aug. 1995 |
| Extern publiziert | Ja |
Abstract
Single-electron tunneling through quantum dots is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in semiconducting AlGaAs/GaAs heterostructures in lateral and vertical tunneling relative to the surface of the device. Single-electron tunneling through a single and two coupled quantum dots is presented.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica B: Physics of Condensed Matter, Jahrgang 212, Nr. 3, 02.08.1995, S. 207-212.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Transport spectroscopy of single and coupled quantum-dot systems
AU - Haug, R. J.
AU - Blick, R. H.
AU - Schmidt, T.
N1 - Funding information: Discussions with and contributions of M. Tewordt, D. Pfannkuche, V. Falko, K. v. Klitzing, K. Eberl, A. F/Srster and H. Liith are gratefully acknowledged. Part of this work has been supported by the Bundesministerium fiir Forschung und Technologie.
PY - 1995/8/2
Y1 - 1995/8/2
N2 - Single-electron tunneling through quantum dots is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in semiconducting AlGaAs/GaAs heterostructures in lateral and vertical tunneling relative to the surface of the device. Single-electron tunneling through a single and two coupled quantum dots is presented.
AB - Single-electron tunneling through quantum dots is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in semiconducting AlGaAs/GaAs heterostructures in lateral and vertical tunneling relative to the surface of the device. Single-electron tunneling through a single and two coupled quantum dots is presented.
UR - http://www.scopus.com/inward/record.url?scp=0029633085&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(95)00033-6
DO - 10.1016/0921-4526(95)00033-6
M3 - Article
AN - SCOPUS:0029633085
VL - 212
SP - 207
EP - 212
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
SN - 0921-4526
IS - 3
ER -