Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 757-760 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 13 |
| Ausgabenummer | 2-4 |
| Publikationsstatus | Veröffentlicht - März 2002 |
Abstract
Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 13, Nr. 2-4, 03.2002, S. 757-760.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots
AU - Haendel, K. M.
AU - Lenz, C.
AU - Denker, U.
AU - Schmidt, O. G.
AU - Eberl, K.
AU - Haug, R. J.
PY - 2002/3
Y1 - 2002/3
N2 - Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed.
AB - Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed.
KW - Germanium
KW - Self-assembled quantum dots
KW - Silicon-Germanium
UR - http://www.scopus.com/inward/record.url?scp=0036492985&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00276-X
DO - 10.1016/S1386-9477(02)00276-X
M3 - Article
AN - SCOPUS:0036492985
VL - 13
SP - 757
EP - 760
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -